Lead DRAM Device Engineer – Drive Yield & Memory Innovation

Micron Technology, Inc

Boise (ID)

On-site

USD 130,000 - 180,000

Full time

14 days+
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Benefits offered by this job

Medical, dental & vision plans
Paid time off
Paid holidays

Job summary

Micron Technology, Inc in Boise, Idaho is seeking a Lead DRAM Device Engineer to provide technical leadership in device development, characterization, and yield improvement for next-generation DRAM.

You will mentor engineers, drive cross-functional collaboration, and guide technology transfer and fab ramp activities, with emphasis on data-driven problem solving and high-impact manufacturing challenges.

Qualifications

  • MS/PhD in Electrical Engineering, Materials Engineering, or a related field.
  • Experience with new node introductions, production yield ramps, and/or technology transfer initiatives.
  • Strong knowledge of semiconductor device physics, device characterization, and electrical data analysis.
  • Experience with statistical analysis and data-driven problem-solving methodologies.

Responsibilities

  • Lead DRAM device activities and serve as the primary technical point of contact for device engineering initiatives.
  • Drive device characterization, electrical data analysis, and issue segmentation to improve yield, performance, and product quality.
  • Support new node introductions, technology transfers, and fab ramp activities through root-cause analysis and corrective action leadership.
  • Provide technical direction across Process Integration, Product Engineering, Design, Quality, and Failure Analysis teams to resolve high-impact manufacturing challenges.
  • Mentor engineers and promote best practices in device analysis, experimentation, and data-driven problem solving.

Skills

Semiconductor physics
Device characterization
Electrical data analysis
Statistics / data-driven analysis
Cross-functional leadership

Education

MS/PhD in EE or Materials

Tools

AI tools
Data analytics software

Job description

Micron Technology, Inc in Boise, Idaho is seeking a Lead DRAM Device Engineer to provide technical leadership in device development, characterization, and yield improvement for next-generation DRAM.

You will mentor engineers, drive cross-functional collaboration, and guide technology transfer and fab ramp activities, with emphasis on data-driven problem solving and high-impact manufacturing challenges.

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