DRAM Process Integration Engineer — Shape Next-Gen Memory

Micron Technology, Inc.; Boise, Northern (ID, KY); Hybrid; USD 120,000 - 180,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid time off

Competitive compensation package

Job summary

Micron Technology, Inc. in Boise, Idaho, is seeking a DRAM Process Integration Engineer to drive advanced memory device integration from concept to silicon.

You will lead cross-functional teams in process development, device physics analysis, and DOE-driven experiments to optimize performance, yield, and cost. The ideal candidate holds an MS or PhD in a relevant field, has strong knowledge of semiconductor device physics and materials science, and demonstrates a track record of delivering

Qualifications

• MS or PhD with equivalent experience in Electrical Engineering, Materials Science, Physics, or related field.
• Strong expertise in semiconductor device physics and materials science with understanding of process integration and process development.
• Experience with data analysis, DOE, and statistical methods.
• Proven track record to lead projects and deliver results across functional technical teams.

Responsibilities

• Lead integration activities for advanced semiconductor devices, including charge storage devices, TFTs, and related structures.
• Evaluate device operating mechanisms, failure modes, noise sources, and variability to improve performance and reliability.
• Collaborate with multi-functional teams to identify and resolve performance, yield, reliability, and product margin challenges.
• Design, implement, and analyze experiments in the R&D fab to optimize process flows and meet product requirements.
• Analyze inline, parametric, and probe data to drive yield improvement, process margin, and cost reduction.
• Communicate sophisticated technical issues and lead teams toward achieving project goals.

Skills

Semiconductor device physics

Process integration

Data analysis

DOE

Statistical methods

Project leadership

Education

MS or PhD in Electrical Engineering

MS or PhD in Materials Science/Physics

Equivalent experience

Job description

Micron Technology, Inc. in Boise, Idaho, is seeking a DRAM Process Integration Engineer to drive advanced memory device integration from concept to silicon.

You will lead cross-functional teams in process development, device physics analysis, and DOE-driven experiments to optimize performance, yield, and cost. The ideal candidate holds an MS or PhD in a relevant field, has strong knowledge of semiconductor device physics and materials science, and demonstrates a track record of delivering