DRAM Process Integration Intern: AI-Driven R&D

Micron Technology; Boise (ID); On-site; USD 80,000 - 100,000; Full time

Job summary

Micron Technology in Boise is seeking a process integration engineer with a strong background in DRAM development and AI-assisted analysis. You will work with cross-functional teams to define integration requirements and drive next-gen memory architectures forward in a fast-paced R&D environment.

The role targets candidates pursuing a Master of Science in Electrical Engineering or Microelectronics, with demonstrated knowledge of DOE, data analysis, and memory technologies.

Qualifications

• Master's degree in Electrical Engineering, Microelectronics, or related field.
• Experience with DRAM process integration and advanced memory technologies.
• Experience with Design of Experiments (DOE), statistical analysis, and data interpretation.
• Experience using AI tools to support technical problem-solving and data analysis.

Responsibilities

• Define technology landmarks, design rules, specs, and integration requirements for next-gen DRAM products.
• Collaborate with multi-functional teams to achieve objectives and timelines.
• Lead module-related integration activities, identify risks, develop test plans, and communicate progress.
• Evaluate alternative architectures, process enablers, and scaling solutions for future DRAM roadmaps.
• Utilize AI-assisted tools to improve engineering productivity and decision-making.

Skills

DRAM process integration

AI tools

Education

MS in Electrical Engineering / Microelectronics

Job description

Micron Technology in Boise is seeking a process integration engineer with a strong background in DRAM development and AI-assisted analysis. You will work with cross-functional teams to define integration requirements and drive next-gen memory architectures forward in a fast-paced R&D environment.

The role targets candidates pursuing a Master of Science in Electrical Engineering or Microelectronics, with demonstrated knowledge of DOE, data analysis, and memory technologies.