DRAM Pathfinding & Integration Architect

Micron; City of Albany (NY); On-site; USD 120,000 - 180,000; Full time

Job summary

Micron Technology in Albany NY is seeking a DRAM Pathfinding & Process Integration Engineer to lead early-phase technology investigations for next-generation DRAM architectures. You will define structural and electrical requirements and translate them into coordinated process solutions.

Collaborating with device engineering, lithography, dry etch, thin films, CMP, metrology, modeling, and manufacturing teams, you will assess options, speed learning, and reduce risk before moving to development

Qualifications

• Master's degree or equivalent in a technical field.
• 5+ years of semiconductor industry experience in process integration, development, or advanced R&D.
• Strong understanding of memory technologies including DRAM, NAND, SRAM, and emerging architectures.
• Extensive knowledge of semiconductor device physics and process integration.
• Experience with DOE methodologies, statistical analysis, and technical problem-solving.
• Proven ability to influence and collaborate across multidisciplinary teams.
• AI proficiency or AI-enabled ways of working.

Responsibilities

• Lead investigation of upcoming DRAM technology concepts, materials, and process architectures.
• Assess scaling approaches enabled by High-NA EUV and advanced patterning technologies.
• Develop learning plans and evaluation methods to speed up development decisions.
• Clarify criteria for structural, electrical, reliability, and design-rule requirements for memory architectures.
• Coordinate efforts across lithography, etch, films, CMP, metrology, and device engineering teams.

Skills

Process integration

DOE methodologies

Statistical analysis

AI/ML literacy

Cross-functional collaboration

Device physics

Education

Master's degree in Electrical Engineering / Physics / Materials Science / Chemical Engineering or related field

Job description

Micron Technology in Albany NY is seeking a DRAM Pathfinding & Process Integration Engineer to lead early-phase technology investigations for next-generation DRAM architectures. You will define structural and electrical requirements and translate them into coordinated process solutions.

Collaborating with device engineering, lithography, dry etch, thin films, CMP, metrology, modeling, and manufacturing teams, you will assess options, speed learning, and reduce risk before moving to development