DRAM Pathfinding & Process Integration Engineer

Micron; City of Albany (NY); On-site; USD 120,000 - 180,000; Full time

Job summary

Micron Technology in Albany NY is seeking a DRAM Pathfinding & Process Integration Engineer to lead early-phase technology investigations for next-generation DRAM architectures. You will define structural and electrical requirements and translate them into coordinated process solutions.

Collaborating with device engineering, lithography, dry etch, thin films, CMP, metrology, modeling, and manufacturing teams, you will assess options, speed learning, and reduce risk before moving to development

Qualifications

• Master's degree or equivalent in a technical field.
• 5+ years of semiconductor industry experience in process integration, development, or advanced R&D.
• Strong understanding of memory technologies including DRAM, NAND, SRAM, and emerging architectures.
• Extensive knowledge of semiconductor device physics and process integration.
• Experience with DOE methodologies, statistical analysis, and technical problem-solving.
• Proven ability to influence and collaborate across multidisciplinary teams.
• AI proficiency or AI-enabled ways of working.

Responsibilities

• Lead investigation of upcoming DRAM technology concepts, materials, and process architectures.
• Assess scaling approaches enabled by High-NA EUV and advanced patterning technologies.
• Develop learning plans and evaluation methods to speed up development decisions.
• Clarify criteria for structural, electrical, reliability, and design-rule requirements for memory architectures.
• Coordinate efforts across lithography, etch, films, CMP, metrology, and device engineering teams.

Skills

Process integration

DOE methodologies

Statistical analysis

AI/ML literacy

Cross-functional collaboration

Device physics

Education

Master's degree in Electrical Engineering / Physics / Materials Science / Chemical Engineering or related field

Job description

Our vision is to transform how the world uses information to enrich life for all .

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

Join the DRAM Technology Development team at Micron to influence the future of memory technology. Based at the NY CREATES Albany NanoTech Complex, we create breakthrough innovations that drive future DRAM scaling! Our work involves sophisticated patterning, novel materials, new device architectures, and High-NA EUV lithography.

You will work with leading equipment suppliers, research institutions, and Micron's global development teams to solve difficult semiconductor technology problems and guide the strategic direction of memory technology!

Position Summary

As a DRAM Pathfinding & Process Integration Engineer, you will lead early-phase technology investigation and process integration for next-generation DRAM architectures.

You will define structural, electrical, and manufacturability requirements for future memory technologies and translate these requirements into coordinated process solutions. Collaborating with device engineering, lithography, dry etch, thin films, CMP, metrology, modeling, and manufacturing teams, you will assess technology options, speed up learning, and lower technical risk before concepts move into formal development programs.

We partner with NY CREATES and strategic ecosystem collaborators to assess new process technologies and build innovative solutions that allow future DRAM scaling beyond standard roadmaps.

This role supports the build and deployment of AI-enabled solutions that accelerate engineering learning, improve data interpretation, and enhance technology decision-making.

Responsibilities

Technology Pathfindin g

• Lead investigation of upcoming DRAM technology concepts, materials, and process architectures.
• Assess innovative scaling approaches supported by High-NA EUV and sophisticated patterning technologies.
• Develop learning plans and technology evaluation approaches that speed up development decisions.
• Develop key knowledge that impacts Micron's future memory technology roadmap.

Advanced Process Coordination

• Develop and integrate novel process flows enabling next-generation DRAM technologies.
• Establish structural, electrical, reliability, and design-rule criteria for advanced memory architectures.
• Lead process improvement efforts across lithography, etch, films, CMP, metrology, and device engineering teams.
• Balance performance, manufacturability, yield, reliability, and cost objectives.

High-NA EUV Development

• Partner with lithography and process development teams to enable future High-NA EUV patterning solutions.
• Evaluate process interactions affecting pattern fidelity, overlay performance, stochastic defectivity, and yield.
• Identify integration needs for upcoming DRAM scaling approaches.
• Work together with suppliers and research partners to evaluate emerging lithography capabilities.

Data Analytics & Learning Acceleration

• Build and complete DOE plans and technology learning experiments.
• Analyze electrical, defectivity, metrology, reliability, and yield data using sophisticated statistical methodologies.
• Leverage AI-assisted analytics and modeling techniques to accelerate process learning.
• Communicate technical findings, risks, tradeoffs, and strategic recommendations to technical and business leadership.

Ecosystem Teamwork

• Work directly with NY CREATES, equipment suppliers, and strategic research collaborators.
• Lead technical discussions involving future technology requirements and capability development.
• Support joint development activities while safeguarding Micron intellectual property.
• Influence investment and development priorities through technical leadership.

Technology Transfer

• Support the transition of successful pathfinding concepts into technology development and production.
• Drive alignment between development, integration, and manufacturing organizations.
• Document critical learning, technical assumptions, risks, and recommendations.
• Ensure strong technology preparedness for upcoming DRAM generations.

Qualifications

• Master's degree or equivalent experience in Electrical Engineering, Physics, Materials Science, Chemical Engineering, or a related technical field.
• 5+ years of semiconductor industry experience in process integration, process development, device engineering, or advanced R&D.
• Strong understanding of memory technologies including DRAM, NAND, SRAM, and emerging memory architectures.
• Extensive knowledge of semiconductor device physics and process integration.
• Experience with DOE methodologies, statistical analysis, and technical problem-solving.
• Proven track record to influence and collaborate across multidisciplinary engineering teams.
• AI proficiency or AI-enabled ways of working.

Preferred Qualifications

Ph.D. or equivalent experience in