DRAM Design Engineer Intern - AI-Driven Memory

Micron Technology, Inc; Boise (ID); On-site; USD 110,000 - 160,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid time-off

Paid holidays

Job summary

Micron Technology, Inc. is seeking a DRAM Design Engineer to design or analyze digital and analog circuits used in memory product development, with AI methods applied to improve design efficiency and performance.

Based in Boise, Idaho, this on-site role offers collaboration with world-class engineers, access to advanced tools, and a pathway to grow within a global leader in memory and storage solutions.

Qualifications

• Design or analyze digital and analog circuits for memory product development.
• Experience applying AI methods to design processes is a plus.
• Strong fundamentals in circuit design and verification is expected.

Responsibilities

• Design or analyze digital and analog circuits used in memory product development.
• Apply AI techniques to improve design efficiency and performance.
• Collaborate with cross-functional teams to integrate designs into memory products.

Skills

Digital circuit design

Analog circuit design

Verilog/VHDL

Python for AI/EDA

Education

Bachelor's degree in Electrical Engineering

Tools

Cadence

Synopsys

SPICE simulations

Job description

Micron Technology, Inc. is seeking a DRAM Design Engineer to design or analyze digital and analog circuits used in memory product development, with AI methods applied to improve design efficiency and performance.

Based in Boise, Idaho, this on-site role offers collaboration with world-class engineers, access to advanced tools, and a pathway to grow within a global leader in memory and storage solutions.