DRAM Device & Cell Tech Engineer - Shape Future Memory

Micron Technology; Boise (ID); On-site; USD 110,000 - 140,000; Full time

Job summary

Micron Technology is seeking engineers to join the DRAM Device & Cell Technology team in Boise, Idaho, to advance memory technologies powering AI and cloud computing. The role focuses on device integration, characterization, and reliability analysis for DRAM scaling challenges.

Ideal candidates have MS/PhD in relevant fields, strong MOSFET/memory device knowledge, and hands-on silicon experience with Python, MATLAB, or JMP for data analysis and technology development.

Qualifications

• MS/PhD in Electrical Engineering, Materials Science, Applied Physics, Semiconductor Engineering, or related field.
• Hands‑on experience with silicon experiments, data analysis, and technology development.
• Strong understanding of MOSFETs, capacitors, and memory device operation.

Responsibilities

• Develop DRAM device and cell technology to enable memory scaling.
• Analyze device data and participate in technology development roadmaps.
• Collaborate with process and test teams to improve reliability and performance.

Skills

MOSFETs

Memory devices

Process integration

Device characterization

Reliability analysis

Education

MS/PhD in Electrical Engineering or related field

Tools

Python

MATLAB

JMP

Job description

Micron Technology is seeking engineers to join the DRAM Device & Cell Technology team in Boise, Idaho, to advance memory technologies powering AI and cloud computing. The role focuses on device integration, characterization, and reliability analysis for DRAM scaling challenges.

Ideal candidates have MS/PhD in relevant fields, strong MOSFET/memory device knowledge, and hands-on silicon experience with Python, MATLAB, or JMP for data analysis and technology development.