DRAM Process Integration Intern—AI-Enabled Research

Micron Technology, Inc; Boise (ID); Hybrid; USD 34,000 - 48,000; Full time

Benefits offered by this job

Medical benefits

Paid time off

Holiday pay

Job summary

Micron Technology, Inc. seeks a Process Integration Intern for DRAM technologies in Boise, Idaho. You will support multi-functional teams across process integration, device engineering, materials development, and process architecture to advance next-generation DRAM memory technologies.

The role requires hands-on use of DOE, data analytics, and problem-solving in a collaborative R&D environment. Excellent communication and planning skills are essential for success in a fast-paced technology

Qualifications

• Pursuing MS in Electrical Engineering, Microelectronics, or related field with expected graduation Sept 2027 or later.
• Knowledge of semiconductor process integration, device physics, and scaling principles.
• Experience using DOE, statistical analysis, and data-driven problem-solving methodologies.
• Strong written and verbal communication skills.

Responsibilities

• Define technology achievements, design rules, structural requirements, and electrical specifications for next-gen DRAM technologies.
• Collaborate with process development, simulation, architecture, circuit design, and quality teams.
• Develop and maintain documentation related to process integration plans, risks, issues, and strategies.
• Evaluate alternative device architectures and scaling approaches to support future tech development.
• Leverage AI/AI-Assisted tools to enhance analysis, data interpretation, productivity, and decision-making.

Skills

DOE

Statistical analysis

Data-driven problem solving

Communication skills

Education

Master of Science in Electrical Engineering

Tools

AI Tools

Design of Experiments (DOE)

Job description

Micron Technology, Inc. seeks a Process Integration Intern for DRAM technologies in Boise, Idaho. You will support multi-functional teams across process integration, device engineering, materials development, and process architecture to advance next-generation DRAM memory technologies.

The role requires hands-on use of DOE, data analytics, and problem-solving in a collaborative R&D environment. Excellent communication and planning skills are essential for success in a fast-paced technology