DRAM Process Integration Intern—AI-Enabled Research

Micron Technology, Inc

Boise (ID)

Hybrid

USD 34,000 - 48,000

Full time

7 days ago
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Benefits offered by this job

Medical benefits
Paid time off
Holiday pay

Job summary

Micron Technology, Inc. seeks a Process Integration Intern for DRAM technologies in Boise, Idaho. You will support multi-functional teams across process integration, device engineering, materials development, and process architecture to advance next-generation DRAM memory technologies.

The role requires hands-on use of DOE, data analytics, and problem-solving in a collaborative R&D environment. Excellent communication and planning skills are essential for success in a fast-paced technology

Qualifications

  • Pursuing MS in Electrical Engineering, Microelectronics, or related field with expected graduation Sept 2027 or later.
  • Knowledge of semiconductor process integration, device physics, and scaling principles.
  • Experience using DOE, statistical analysis, and data-driven problem-solving methodologies.
  • Strong written and verbal communication skills.

Responsibilities

  • Define technology achievements, design rules, structural requirements, and electrical specifications for next-gen DRAM technologies.
  • Collaborate with process development, simulation, architecture, circuit design, and quality teams.
  • Develop and maintain documentation related to process integration plans, risks, issues, and strategies.
  • Evaluate alternative device architectures and scaling approaches to support future tech development.
  • Leverage AI/AI-Assisted tools to enhance analysis, data interpretation, productivity, and decision-making.

Skills

DOE
Statistical analysis
Data-driven problem solving
Communication skills

Education

Master of Science in Electrical Engineering

Tools

AI Tools
Design of Experiments (DOE)

Job description

Micron Technology, Inc. seeks a Process Integration Intern for DRAM technologies in Boise, Idaho. You will support multi-functional teams across process integration, device engineering, materials development, and process architecture to advance next-generation DRAM memory technologies.

The role requires hands-on use of DOE, data analytics, and problem-solving in a collaborative R&D environment. Excellent communication and planning skills are essential for success in a fast-paced technology

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