DRAM Device Engineer Intern — Innovate in Memory Tech

Micron Technology, Inc.; Boise, Northern (ID, KY); Hybrid; USD 28,000 - 41,000; Part time

Job summary

Micron Technology, Inc. is seeking an Intern - DRAM Device Engineer in Boise, Idaho, USA. You will support integration of DRAM process modules, analyze electrical and inline data to identify yield issues, and collaborate with YE, Device, PI, and process teams to drive improvements.

The role offers exposure to advanced technology development and cross-functional projects. Ideal candidates are PhD students in Electrical or Materials Engineering with strong semiconductor knowledge and good

Qualifications

• Strong knowledge of semiconductor devices required.
• Advanced CMOS or capacitor knowledge preferred.
• Basic knowledge of DRAM, NAND, NOR memories.
• Knowledge of statistical data analysis.
• Knowledge of semiconductor process flow; DRAM flow a plus.
• Good communication and self-motivation; internship length 6 months+.

Responsibilities

• Support integration of process modules across DRAM module loops.
• Analyze electrical and inline data to identify yield detractors and process anomalies.
• Collaborate with cross-functional teams to drive continuous improvement.
• Document findings and present updates to engineering and leadership teams.
• Leverage AI tools to improve problem solving efficiency and productivity.

Skills

Semiconductor devices

CMOS knowledge

Capacitor knowledge

Memory basics

Statistical analysis

Process flow

DRAM process flow

Communication skills

Self-motivation

Education

PhD student in Electrical Engineering

PhD student in Materials Engineering

Job description

Micron Technology, Inc. is seeking an Intern - DRAM Device Engineer in Boise, Idaho, USA. You will support integration of DRAM process modules, analyze electrical and inline data to identify yield issues, and collaborate with YE, Device, PI, and process teams to drive improvements.

The role offers exposure to advanced technology development and cross-functional projects. Ideal candidates are PhD students in Electrical or Materials Engineering with strong semiconductor knowledge and good