DRAM Cell & Device Innovation Intern

Micron; Boise (ID); On-site; USD 34,000 - 55,000; Full time

Benefits offered by this job

Medical/Dental/Vision

Paid time off

Paid holidays

Job summary

Micron Technology, at its Boise R&D site, seeks an intern for the Advanced DRAM Device & Cell Technology team to contribute to development and characterization of future DRAM technologies through experiments, data analysis, and cross-functional collaboration.

You will design silicon experiments, perform electrical and materials characterization, and apply AI-assisted workflows to improve data insights and project throughput.

Qualifications

• Pursuing an M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or a related technical field.
• Cannot graduate prior to September 2027.
• Demonstrated understanding of semiconductor fundamentals, including device physics, materials science, characterization techniques relevant to memory technologies.
• Experience with electrical characterization, device testing, statistical analysis, and interpretation of experimental or simulation data sets.
• Familiarity with DRAM concepts, including activation, sensing, retention, and disturb mechanisms.
• Proficiency with data analysis and scripting tools such as Python, MATLAB, JMP, or similar, plus familiarity with AI-assisted analytics.

Responsibilities

• Support evaluation of DRAM devices and cell stack elements through characterization, data analysis, and assessment of new device architectures, materials systems, and integration schemes.
• Design and implement silicon experiments; perform electrical, physical, and materials characterization along with statistical analysis to find opportunities for device, process, and design improvements.
• Analyze device- and array-level behavior including sensing margins, activation characteristics, retention and disturb mechanisms, leakage, and read/write interactions.
• Collaborate with modeling, design, process integration, and manufacturing teams to understand device behavior, support technology optimization, and contribute to technology development activities.
• Apply AI-Assisted and Generative AI tools to enhance data analysis, workflow efficiency, and technical decision-making.

Skills

Python

MATLAB

JMP

Education

MS/PhD in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering

Tools

TCAD

Job description

Micron Technology, at its Boise R&D site, seeks an intern for the Advanced DRAM Device & Cell Technology team to contribute to development and characterization of future DRAM technologies through experiments, data analysis, and cross-functional collaboration.

You will design silicon experiments, perform electrical and materials characterization, and apply AI-assisted workflows to improve data insights and project throughput.