DRAM Cell & Device Tech Intern - AI-Driven Memory R&D

1000 Micron Technology, Inc.; Boise (ID); On-site; USD 25,000 - 36,000; Full time

Benefits offered by this job

Medical/Dental/Vision plans

Paid time off

Paid holidays

Job summary

Micron Technology, Inc. in Boise invites a motivated intern to contribute to the Advanced DRAM Device & Cell Technology team.

You will participate in development and characterization of future DRAM cell and access device technologies through experimental studies, data analysis, and collaboration with multidisciplinary engineering teams. The role combines semiconductor device physics, materials engineering, silicon experimentation, electrical characterization, and data-driven decision making to

Qualifications

• Pursuing an M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or related technical field.
• Cannot graduate prior to September 2027.
• Demonstrated understanding of semiconductor fundamentals, device physics, materials science, characterization techniques, and concepts related to advanced memory technologies.
• Experience with electrical characterization, device testing, statistical analysis, and interpretation of experimental or simulation data sets.
• Familiarity with DRAM concepts including activation, sensing, retention, and disturb mechanisms.
• Proficiency with data analysis and scripting tools such as Python, MATLAB, JMP, or similar, plus familiarity with AI-assisted analytics.

Responsibilities

• Support evaluation of DRAM access devices, capacitors, and cell stack elements through characterization and data analysis.
• Design and implement silicon experiments; perform electrical, physical, and materials characterization with statistical analysis to identify improvements.
• Analyze device- and array-level behavior including sensing margins, activation characteristics, retention, and disturbance mechanisms.
• Collaborate with modeling, design, process integration, and manufacturing teams to understand device behavior and optimize technology.
• Apply AI-assisted and Generative AI tools to enhance data analysis, workflow efficiency, and technical decision-making.

Skills

Electrical characterization

Device testing

Statistical analysis

Python

MATLAB

JMP

Education

M.S./Ph.D. in Electrical Engineering or related field

Job description

Micron Technology, Inc. in Boise invites a motivated intern to contribute to the Advanced DRAM Device & Cell Technology team.

You will participate in development and characterization of future DRAM cell and access device technologies through experimental studies, data analysis, and collaboration with multidisciplinary engineering teams. The role combines semiconductor device physics, materials engineering, silicon experimentation, electrical characterization, and data-driven decision making to