3D DRAM Process Integration Engineer

Micron Technology; Boise (ID); On-site; USD 60,000 - 80,000; Full time

Benefits offered by this job

Healthcare plans

Paid time off

Paid holidays

Benefits guide

Job summary

Micron Technology in Boise is seeking a PhD candidate for a Process Integration Engineer position within the 3D DRAM organization. You will contribute to integration and circuit issues for next-generation memory, focusing on device components, charge storage devices, and thin-film transistors, with emphasis on performance and yield in a cutting-edge R&D fab.

As a world-class team, you will collaborate with process development, product engineering, design, and reliability groups.

Qualifications

• PhD candidate in Materials Science and Electrical Engineering, to graduate after September 2027.
• Currently a student and unable to graduate before Sept 2027.
• Focus on semiconductor device fabrication and electrical/material characterization.

Responsibilities

• Contribute to technology development activities to enable next generation DRAM, working on device components such as charge storage devices and thin-film transistors, among others.
• Optimize process flows and develop creative solutions to meet product requirements.
• Engage cross‑functional teams including process development, product engineering, design, probe, and yield enhancement to address performance and yield issues.
• Design and run experiments in the R&D fab.
• Analyze inline, parametric, and probe data to evaluate operating and failure mechanisms, sources of noise and variability, and to apply fundamental principles for optimization of device performance and reliability.
• Summarize sophisticated problems, explain the actions necessary to address them, and drive the team to implement them.

Skills

Data analysis

Modeling

Collaboration

Semiconductor industry

Education

PhD candidate

Job description

Micron Technology in Boise is seeking a PhD candidate for a Process Integration Engineer position within the 3D DRAM organization. You will contribute to integration and circuit issues for next-generation memory, focusing on device components, charge storage devices, and thin-film transistors, with emphasis on performance and yield in a cutting-edge R&D fab.

As a world-class team, you will collaborate with process development, product engineering, design, and reliability groups.