Research Fellow — Advanced MRAM for AI Memory

NANYANG TECHNOLOGICAL UNIVERSITY; Singapore; On-site; SGD 120,000 - 180,000; Full time

Job summary

Nanyang Technological University invites a Research Fellow to contribute to the development of Advanced MRAM technology for AI memory and smart sensing. You will lead high-performance MRAM device design, work with global partners, and prepare industry-focused reports.

The role requires a PhD in a relevant field, 6+ years of experience in memory devices, and strong analytical and presentation skills. This is a full-time, on-site post at SPMS in Singapore.

Qualifications

• PhD in a relevant physical sciences or engineering field.
• At least 6 years of relevant experience including PhD research in non-volatile memory or related area.
• Strong experience in semiconductor wafer-level device development.
• Proficiency in semiconductor processing techniques relevant to memory device fabrication.
• Good programming, modelling or simulation experience is a plus.

Responsibilities

• Design and develop high-performance MRAM devices for advanced memory applications.
• Coordinate with international semiconductor companies, research institutes and foundry partners.
• Lead preparation of technical write-ups for quarterly industry press releases.
• Perform PVD of MRAM structures on 300 mm wafers using ULVAC Entron system.
• Coordinate with circuit designers and foundries on CMOS front-end and back-end integration.
• Conduct MRAM electrical transport measurements and reliability tests.
• Fabricate MRAM devices using lithography techniques (optical and/or electron-beam).
• Analyse structural, electrical and materials characterization results (SEM, XRD, TEM).

Skills

Programming

Device modelling

Simulation

Analytical skills

Data visualisation

Communication

Independent work

Education

PhD degree in a relevant field

Tools

ULVAC Entron system

PVD

ICP-RIE

Ion milling

SEM

XRD

TEM

Job description

Nanyang Technological University invites a Research Fellow to contribute to the development of Advanced MRAM technology for AI memory and smart sensing. You will lead high-performance MRAM device design, work with global partners, and prepare industry-focused reports.

The role requires a PhD in a relevant field, 6+ years of experience in memory devices, and strong analytical and presentation skills. This is a full-time, on-site post at SPMS in Singapore.