Research Fellow (Physical Sciences/Engineering)

NANYANG TECHNOLOGICAL UNIVERSITY; Singapore; On-site; SGD 120,000 - 180,000; Full time

Job summary

Nanyang Technological University invites a Research Fellow to contribute to the development of Advanced MRAM technology for AI memory and smart sensing. You will lead high-performance MRAM device design, work with global partners, and prepare industry-focused reports.

The role requires a PhD in a relevant field, 6+ years of experience in memory devices, and strong analytical and presentation skills. This is a full-time, on-site post at SPMS in Singapore.

Qualifications

• PhD in a relevant physical sciences or engineering field.
• At least 6 years of relevant experience including PhD research in non-volatile memory or related area.
• Strong experience in semiconductor wafer-level device development.
• Proficiency in semiconductor processing techniques relevant to memory device fabrication.
• Good programming, modelling or simulation experience is a plus.

Responsibilities

• Design and develop high-performance MRAM devices for advanced memory applications.
• Coordinate with international semiconductor companies, research institutes and foundry partners.
• Lead preparation of technical write-ups for quarterly industry press releases.
• Perform PVD of MRAM structures on 300 mm wafers using ULVAC Entron system.
• Coordinate with circuit designers and foundries on CMOS front-end and back-end integration.
• Conduct MRAM electrical transport measurements and reliability tests.
• Fabricate MRAM devices using lithography techniques (optical and/or electron-beam).
• Analyse structural, electrical and materials characterization results (SEM, XRD, TEM).

Skills

Programming

Device modelling

Simulation

Analytical skills

Data visualisation

Communication

Independent work

Education

PhD degree in a relevant field

Tools

ULVAC Entron system

PVD

ICP-RIE

Ion milling

SEM

XRD

TEM

Job description

Join Our Team at the School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore

The School of Physical and Mathematical Sciences (SPMS) at NTU Singapore hosts research and education activities in two divisions: Division of Mathematical Sciences (MAS) and Division of Physics and Applied Physics (PAP). MAS covers diverse topics ranging from pure mathematics to the applications of mathematics in cryptography, computing, business, and finance. PAP covers many areas of fundamental and applied physics, including quantum information, condensed matter physics, biophysics, and photonics. Over the years, SPMS has attracted talented individuals from around the world and Singapore to join as scientific leaders and researchers.

Join the laboratory of Prof Lew Wen Siang at SPMS. We are seeking a Research Fellow to contribute to a project focused on the Development of Advanced MRAM Technology for Artificial Intelligence Memory and Smart Sensing.

Key Responsibilities:

• Design and develop high-performance MRAM devices for advanced computing memory applications.

• Manage project activities by liaising with international semiconductor companies, research institutes, and foundry partners.

• Lead the preparation of technical write-ups for quarterly industry press releases related to the joint development programme.

• Perform physical vapour deposition (PVD) of MRAM structures on 300 mm wafers using the ULVAC Entron system.

• Coordinate with circuit designers and semiconductor foundries on CMOS front-end wafer development and back-end-of-line integration processes.

• Conduct MRAM electrical transport measurements using probe stations and bonded memory chips, including device-level reliability testing such as endurance and retention measurements.

• Fabricate MRAM devices using advanced lithography techniques, including optical lithography and/or electron-beam lithography.

• Perform device processing using ICP-RIE and/or ion milling techniques.

• Analyse structural, electrical, and materials characterisation results, including scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and related techniques.

Job Requirements:

• PhD degree in a relevant field of physical sciences or engineering.

• At least 6 years of relevant experience in a similar role or technical discipline, including PhD research experience in non-volatile memory or a closely related area.

• Strong experience in semiconductor wafer-level device development.

• Proficiency in semiconductor processing techniques, particularly those relevant to advanced memory device fabrication.

• Good programming skills; experience in device modelling or simulation would be an advantage.

• Strong analytical and data visualisation skills, with the ability to interpret and present complex technical results clearly.

• Ability to work independently, develop practical solutions under tight timelines, and maintain a high level of accuracy and attention to detail.

• Excellent organisational and time management skills.

• Good communication and interpersonal skills, with the ability to prepare project reports and deliver technical presentations to academic and industry stakeholders.

The College of Science seeks a diverse and inclusive workforce and is committed to equality of opportunity. We welcome applications from all and recruit on the basis of merit, regardless of age, race, gender, religion, marital status and family responsibilities, or disability.

We regret to inform that only shortlisted candidates will be notified.