Research Fellow: Advanced MRAM for AI Memory

Nanyang Technological University Singapore; Singapore; On-site; SGD 72,000 - 110,000; Full time

Job summary

NTU Singapore invites applications for a Research Fellow to contribute to the Development of Advanced MRAM Technology for AI memory and smart sensing, focusing on high-performance MRAM devices and liaison with international semiconductor partners.

The role requires a PhD in a relevant field, 6+ years of experience, expertise in semiconductor wafer processes, lithography, PVD, device testing, and the ability to produce technical write-ups for industry audiences and scientific publications.

Qualifications

• PhD degree in a relevant field of physical sciences or engineering.
• At least 6 years of relevant experience, including PhD research in non-volatile memory or closely related area.
• Strong experience in semiconductor wafer-level device development.

Responsibilities

• Design and develop high-performance MRAM devices for advanced computing memory applications.
• Liaise with international semiconductor companies, research institutes, and foundry partners.
• Lead preparation of technical write-ups for quarterly industry press releases.
• Perform PVD of MRAM structures on 300 mm wafers using the ULVAC Entron system.
• Coordinate with circuit designers and foundries on CMOS front-end wafer development and back-end integration.
• Conduct MRAM electrical transport measurements and device reliability testing.
• Fabricate MRAM devices using lithography, including optical and electron-beam lithography.
• Perform device processing using ICP-RIE and ion milling.
• Analyse characterization results from SEM, XRD, TEM.

Skills

Strong analytical skills

Programming/data visualization

Independent work

Communication with stakeholders

Education

PhD degree in a relevant field of physical sciences or engineering

Tools

PVD

Electron-beam lithography

ICP-RIE

Job description

NTU Singapore invites applications for a Research Fellow to contribute to the Development of Advanced MRAM Technology for AI memory and smart sensing, focusing on high-performance MRAM devices and liaison with international semiconductor partners.

The role requires a PhD in a relevant field, 6+ years of experience, expertise in semiconductor wafer processes, lithography, PVD, device testing, and the ability to produce technical write-ups for industry audiences and scientific publications.