ALD Research Assistant: Area-Selective Thin Films

International Iberian Nanotechnology Laboratory (INL); Portugal; On-site; EUR 24,000 - 36,000; Full time

Benefits offered by this job

Relocation support

Guest House on-site included for the 1

Private health insurance

Job summary

International Iberian Nanotechnology Laboratory (INL) in Portugal is seeking a Research Assistant to join a multinational team. The role involves hands-on work in the cleanroom, conducting experiments on new deposition processes and tools, and growing and characterising thin films.

Applicants should hold a Master’s degree in Physics Engineering, Electrical Engineering, or Materials Engineering and have experience with ALD, thin-film characterization, and meticulous documentation of results.

Qualifications

• Master degree in Physics Engineering, Electrical Engineering, Materials Engineering or related fields.
• Experience in a cleanroom or laboratory setting is required.
• Knowledge of Atomic Layer Deposition (ALD) processes and/or thin-film deposition is required.
• Familiarity with thin-film characterization techniques and reporting experiments.

Responsibilities

• Perform hands-on tasks in a cleanroom environment.
• Conduct experiments on deposition processes and tools.
• Grow and characterize thin films.
• Document experiments, procedures, results and findings.
• Operate an ALD tool for area-selective deposition.

Skills

Cleanroom experience

ALD processes

Thin-film deposition

Documentation

Education

Master's degree in Physics Engineering or Electrical/Materials Engineering

Tools

ALD tool

Job description

International Iberian Nanotechnology Laboratory (INL) in Portugal is seeking a Research Assistant to join a multinational team. The role involves hands-on work in the cleanroom, conducting experiments on new deposition processes and tools, and growing and characterising thin films.

Applicants should hold a Master’s degree in Physics Engineering, Electrical Engineering, or Materials Engineering and have experience with ALD, thin-film characterization, and meticulous documentation of results.