Senior DRAM Design Engineer: Memory Circuits & Innovation

Micron Technology, Inc; Tlaquepaque; Presencial; MXN 500.000 - 800.000; Jornada completa

Descripción de la vacante

Micron Technology, Inc in Mexico is seeking a Sr. Semiconductor Design Engineer, DRAM, to build and analyze CMOS memory circuits from architectural blocks to tape-out, collaborating with global teams.

You will translate device specs into silicon functionality, lead layout coordination, and optimize performance, cost, reliability, and time-to-market while advancing AI and storage technologies.

Formación

• Bachelor’s degree in electrical or computer engineering or equivalent required.
• Foundational knowledge of CMOS build and memory applications.
• Solid grounding in circuit build, simulation setup, analysis, and debugging.
• Strong written and verbal communication skills to convey complex concepts.

Responsabilidades

• Build, simulate, and optimize memory circuits from gate level to full chip using SPICE and Verilog.
• Develop and validate key circuit blocks (arrays, decoders, control logic, data paths, test logic).
• Lead layout coordination (floorplanning, placement, routing) and parasitic modeling.
• Collaborate with CAD, verification, process integration, test, and product engineering for quality and manufacturability.
• Drive verification coverage and AI-based automation across build and verification workflows.

Conocimientos

SPICE

Verilog

CMOS

Memory design

Educación

Bachelor’s degree in Electrical or Computer Engineering

Herramientas

SPICE

Verilog

Descripción del empleo

Micron Technology, Inc in Mexico is seeking a Sr. Semiconductor Design Engineer, DRAM, to build and analyze CMOS memory circuits from architectural blocks to tape-out, collaborating with global teams.

You will translate device specs into silicon functionality, lead layout coordination, and optimize performance, cost, reliability, and time-to-market while advancing AI and storage technologies.