RAM Memory Design Engineer – CMOS & Analog Innovation

NanoHelp; Tlaquepaque; Híbrido; MXN 600.000 - 900.000; Jornada completa

Descripción de la vacante

Micron Technology Inc. in Mexico is seeking a RAM Semiconductor Design Engineer to design memory circuits, optimize layouts, and model parasitics for DRAM, NAND, and analog memory systems.

You will work on CMOs within a collaborative team focused on scalable, high-performance memory technology. The role emphasizes systems thinking, simulation, floor-planning, and architecture awareness, with opportunities to contribute across marketing, process, and test teams in a fast-paced hardware

Formación

• Circuit-level analog/digital design experience required.
• CMOS design experience preferred.
• Experience with memory architecture or DRAM/NAND is a plus.

Responsabilidades

• Design the memory devices and circuits for next‑generation memory solutions.
• Contribute to layout optimization, parasitic modeling, circuit simulation, and floor-planning.
• Collaborate with cross‑functional teams to ensure manufacturability and performance from concept to chip.

Conocimientos

Circuit-level analog/digital design

CMOS design

Educación

B.S. or advanced degree in Electrical/Electronic Engineering

Descripción del empleo

Micron Technology Inc. in Mexico is seeking a RAM Semiconductor Design Engineer to design memory circuits, optimize layouts, and model parasitics for DRAM, NAND, and analog memory systems.

You will work on CMOs within a collaborative team focused on scalable, high-performance memory technology. The role emphasizes systems thinking, simulation, floor-planning, and architecture awareness, with opportunities to contribute across marketing, process, and test teams in a fast-paced hardware