RAM Semiconductor Design Engineer at Micron Technology (Mexico)

NanoHelp; Tlaquepaque; Híbrido; MXN 600.000 - 900.000; Jornada completa

Descripción de la vacante

Micron Technology Inc. in Mexico is seeking a RAM Semiconductor Design Engineer to design memory circuits, optimize layouts, and model parasitics for DRAM, NAND, and analog memory systems.

You will work on CMOs within a collaborative team focused on scalable, high-performance memory technology. The role emphasizes systems thinking, simulation, floor-planning, and architecture awareness, with opportunities to contribute across marketing, process, and test teams in a fast-paced hardware

Formación

• Circuit-level analog/digital design experience required.
• CMOS design experience preferred.
• Experience with memory architecture or DRAM/NAND is a plus.

Responsabilidades

• Design the memory devices and circuits for next‑generation memory solutions.
• Contribute to layout optimization, parasitic modeling, circuit simulation, and floor-planning.
• Collaborate with cross‑functional teams to ensure manufacturability and performance from concept to chip.

Conocimientos

Circuit-level analog/digital design

CMOS design

Educación

B.S. or advanced degree in Electrical/Electronic Engineering

Descripción del empleo

Home Vacancies RAM Semiconductor Design Engineer at Micron Technology (Mexico)

RAM Semiconductor Design Engineer at Micron Technology (Mexico)

Design the Future of Memory at the Heart of Innovation

August 5, 2025

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Micron Technology is hiring a RAM Semiconductor Design Engineer in Tlaquepaque, Jalisco, Mexico. Ideal for engineers with experience in analog/digital circuits, CMOS design, and memory architecture, this full-time role offers the opportunity to innovate in next-generation memory technology.

Title

Organization Micron Technology Inc.

Work Location Tlaquepaque, Jalisco, Mexico

Research/Job Field Semiconductor Memory Design (RAM, DRAM, NAND, Analog)

Funding Info Industry-funded (Micron Technology)

Application Deadline Not specified

Posted Date Ongoing recruitment (as per official site)

Country Mexico

Researcher Profile Engineer (Electrical, Electronic, Mechatronics)

Required Qualification B.S. or advanced degree in Electrical/Electronic Engineering

Required Experience Circuit-level analog/digital design, CMOS preferred

Salary Details Competitive, per industry norms

Micron Technology, a global leader in memory and storage innovation, is searching for passionate engineers to drive the design of next-generation memory solutions. Their RAM Semiconductor Design Engineer opening in Tlaquepaque, Mexico is a unique opportunity for early-career and mid-career engineers to contribute to the digital backbone of tomorrow’s intelligent systems.

As data continues to drive AI, edge computing, and 5G, the foundation of these technologies lies in efficient memory design. In this role, you will help shape the future of DRAM, NAND, and advanced analog memory systems through direct contributions in layout optimization, parasitic modeling, circuit simulation, and floor-planning.

This position isn’t just about silicon — it’s about systems thinking, innovation, and multi-disciplinary collaboration. You’ll partner with internal teams spanning marketing, probe, assembly, test, and process integration — ensuring manufacturability and performance from concept to chip.

If you’re a highly organized, self-motivated engineer with strong fundamentals in CMOS, analog/digital design, and a flair for simulation and layout, this role places you in the epicenter of transformative hardware development. You’ll also benefit from the collaborative environment at Micron, where innovation is paired with ethical responsibility, sustainability, and career support.

Micron prohibits the use of child labor and ensures compliance with all international labor standards. No recruitment fees or payments are collected from candidates. Misrepresentation via AI tools is grounds for disqualification. Always verify job authenticity via the official careers portal .