DRAM Design Intern: Memory Circuits & Silicon Projects

Micron Technology, Inc

Tlaquepaque

Hybrid

MXN 112.000 - 156.000

Vollzeit

14 Tage+
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Zusammenfassung

Micron Technology, Inc. is seeking a DRAM Design Engineer Intern to help design and analyze digital and analog circuits used in memory development.

You will work with global design and verification teams to support product engineering, test, process integration, and manufacturing for cost, quality, reliability and time-to-market. The internship offers hands-on experience across layouts, simulations, and cross-group collaboration, with exposure to AI-assisted design tools and documentation

Qualifikationen

  • Pursuing final year of a Bachelor's or Master's in Electronics Engineering.
  • Strong collaboration and communication skills.
  • Enrolled in accredited university program.

Aufgaben

  • Assist in design, layout, and optimization of memory/logic/analog circuits.
  • Support parasitic modeling and tape-out revisions.
  • Oversee and assist layout processes including floor-planning and routing.
  • Perform verification with modeling and simulation.
  • Collaborate with cross-functional teams to ensure manufacturability.
  • Explore AI-assisted techniques for data organization and automation.

Kenntnisse

Digital logic design basics
Memory architecture understanding
Collaboration
Communication and documentation skills

Ausbildung

Bachelor's degree in Electronics Engineering
Master's degree in Electronics Engineering

Tools

Python scripting

Jobbeschreibung

Micron Technology, Inc. is seeking a DRAM Design Engineer Intern to help design and analyze digital and analog circuits used in memory development.

You will work with global design and verification teams to support product engineering, test, process integration, and manufacturing for cost, quality, reliability and time-to-market. The internship offers hands-on experience across layouts, simulations, and cross-group collaboration, with exposure to AI-assisted design tools and documentation

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