Exploring Scanning Microwave Microscopy for Advanced Semiconductor Characterization

Imec; Vlaams-Brabant; On-site; EUR 11,000 - 15,000; Full time

Benefits offered by this job

Imec allowance provided

Job summary

Imec in Belgium invites a Master internship focused on exploring Scanning Microwave Microscopy for advanced semiconductor characterization. You will evaluate and fine-tune electrical measurements on the nanometer scale.

The project aims to establish SMIM as a characterization capability for semiconductor materials and devices, with emphasis on understanding microwave response and linking it to material properties.

Qualifications

• Master-level student in a relevant field.
• Strong background in semiconductor physics and electrical measurements.
• Experience with scanning probe microscopy is a plus.

Responsibilities

• Evaluate and fine-tune nanoscale electrical measurements.
• Explore SMIM as a characterization capability for semiconductor materials and devices.
• Calibrate, model tip-sample interaction and analyze microwave signals.

Skills

English proficiency

Semiconductor physics

Education

Master's degree in Electrotechnics/Electrical Engineering

Physics

Nanoscience & Nanotechnology

Materials Engineering

Tools

SMIM

AFM/SCM techniques

Job description

/ Exploring Scanning Microwave Microscopy for Advanced Semiconductor Characterization

Exploring Scanning Microwave Microscopy for Advanced Semiconductor Characterization

You evaluate and fine-tune electrical measurements on the nanometer scale.

The continued scalingof semiconductor devices requires advanced characterization techniques capableof probing local electrical properties with nanoscale spatial resolution.Conventional electrical and optical characterization methods often provide eitheraveraged information over relatively large areas or require specific devicegeometries, making it challenging to directly access local variations inelectrical properties such as conductivity, carrier concentration anddielectric response. Scanning Microwave Impedance Microscopy (SMIM) is anemerging scanning probe technique that combines the high spatial resolution ofAtomic Force Microscopy (AFM) with microwave measurements, providing access tolocal electrical and dielectric properties of materials and semiconductorstructures.

Thisproject aims to explore and establish SMIM as an advanced characterizationcapability for a plethora of semiconductor materials and devices, especiallyfor FAB integration. A particular focus will be placed on developing a physicalunderstanding of the measured microwave response, including the real andimaginary components of the signal, and on determining how these signals relateto local material properties. The intern will investigate how parameterssuchas carrier concentration, conductivity, dielectric properties, surfacecondition and measurement geometry influence the SMIM response. Calibration andmeasurements on well-defined reference samples will be used to establish therelationship between the measured microwave signals and the underlying physicalproperties. An important aspect of the research will be to investigate theinformation depth of SMIM measurements. Understanding how deeply the microwavefield probes into a semiconductor is essential for interpreting measurements onthin films, multilayer structures and device architectures. The dependence ofthe measured response on material properties, frequency, tip-sample geometryand sample thickness will be investigated through a combination of experimentsand physical modelling. This will help establish the sensitivity of SMIM tosurface and subsurface electrical properties and identify the types ofsemiconductor structures for which the technique provides meaningful information.The project will further dive into the application of SMIM to dopedsemiconductor materials and device structures. Measurements on samples withdifferent doping concentrations and/or well-defined semiconductor junctionswill be used to investigate the sensitivity of SMIM to local carrierconcentration and electrical properties. Where appropriate, SMIM measurementswill be correlated with complementary characterization techniques such as scanningspreading resistance microscopy, scanning capacitance microscopy and Kelvinprobe force microscopy. The ultimate objective is to develop a betterunderstanding of how SMIM contrast can be interpreted in terms of semiconductorphysics and to identify opportunities where SMIM can provide information thatis difficult to obtain using conventional characterization techniques. Towardsthe end of the internship, SMIM will also be explored on imec pioneered reversetip scanning approach that will enable multimodal SPM imaging and even 3Dtomography. For this research, the student will be trained in advanced scanningprobe microscopy, with a particular emphasis on SMIM and quantitative analysisof microwave signals. This will include sample preparation, measurementoptimization, calibration, and data analysis.

With the guidance ofthe supervisors, data interpretation and analysis will be a major part of thethesis/internship. Depending on the student's interests and the progress of theproject, the work can include numerical modelling of the tip-sample interactionand microwave response, analysis of doped semiconductor structures, andapplication of SMIM to increasingly complex device architectures. Complementarycharacterization and analysis can be performed through existing collaborationsand available facilities. The project therefore provides an opportunity tocombine experimental scanning probe microscopy with semiconductor physics,electrical characterization and quantitative data analysis.

A good command ofEnglish is necessary. Knowledge of semiconductor physics is a must. The projectduration is 6 months, with the possibility of extension if further explorationis warranted.

Type of internship: Master internship

Duration: 6 months

Required educational background: Electrotechnics/Electrical Engineering, Physics, Nanoscience & Nanotechnology, Materials Engineering

The reference code for this position is 2026-INT-320. Mention this reference code in your application.

Imec allowance will be provided.

For further information or for application, please contact Albert Minj ( [e-mail] ) and Pieter Lagrain ( [e-mail] ) and Thomas Hantschel ( [e-mail] )

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