Investigation of reconstruction uncertainties and solution multiplicity in high-harmonics generation EUV scatterometry

Imec; Vlaams-Brabant; In loco; EUR 11.000 - 16.000; Tempo pieno

Descrizione del lavoro

imec is seeking a Master intern to work on reconstruction uncertainties and solution multiplicity in EUV scatterometry. The role involves non-destructive characterization of nanoscale structures using EUV light and advanced statistical methods, under the supervision of imec’s materials characterization lab and KU Leuven’s promoter.

Applicants should have a Physics background and be self-supporting students.

Competenze

• Master internship in EUV scatterometry.
• Apply advanced statistical methods like Markov Chain Monte Carlo to map reconstruction uncertainties.

Mansioni

• Collaborate with imec scientists to develop and test EUV scatterometry algorithms.
• Apply statistical analyses to identify reconstruction uncertainties and multiple solutions.

Formazione

Physics

Strumenti

Markov Chain Monte Carlo

Descrizione del lavoro

/ Investigation of reconstruction uncertainties and solution multiplicity in high-harmonics generation EUV scatterometry

Investigation of reconstruction uncertainties and solution multiplicity in high-harmonics generation EUV scatterometry

Non-destructive characterization of complex nanoscale structures becomes evermore necessary with increasing complexity of next-generation semiconductor devices as contemporary techniques struggle to probe deeper into multilayer stacks

As the world around us becomes evermoretechnologically integrated and devices become smaller, faster, and moreefficient, so too do our favourite gadgets become more complex. Inside each oneof our devices exists a complicated, multi-dimensional maze of components andmaterials that ultimately work together to bring us the technological wondersof today. These crucial structures are made via a complex flow of lithographicprocesses in which layers of material are patterned and deposited, removed andpolished, implanted and etched away at the scale of only a few nanometres. Theprecise manipulation and creation of nanoscale structures is what enables newcomputing powers, more accurate sensors, and faster microelectronics.

These new technologies only workas long as the underlaying structures are near-perfectly made and thecomplexity and extreme small size of these components provides significantchallenges in their characterization and imaging. Recently, a new characterizationtechnique using extreme ultraviolet (EUV) light (with a wavelength in range ~10- 120 nm) has emerged that has the potential to non-destructively characterize nanostructureswith complex inner 3D geometries. This technique, EUV scatterometry, rely onthe use of computer algorithms to process patterns of scattered EUV light froma structure or device in order to identify multiple geometric parameters withsub-nanometre accuracy. This technique shows great promise for non-destructivecharacterization of nanostructures; however, we are only beginning to scratchthe surface of their power for characterizing actual microelectronic devicestructures.

In metrology it is crucial toknow how accurate and precise the technique is. Therefore, quantification of reconstructionuncertainties is of utmost importance. The task gets more complex when solutionis not unique and a number of model parameters are cross-correlated.

In this project, you will workclosely with a diverse team of scientists and experts within imec’s materialscharacterization laboratory and advanced patterning department to help usher ina new era of EUV-based characterization of semiconductor materials. In yourwork, you will apply advanced statistical methods like Markov Chain Monte-Carloto probe and map multidimensional error-parameter spaces in order to identifyhidden correlations, multiple solutions and underlying reconstructionuncertainties while evaluating relevant semiconductor structures and devices. Thealgorithms you develop will push the boundaries of the state-of-the-art in EUV characterization,defining resolution and enabling exotic paradigms such as buried-layer/depth-resolved3D geometry characterization. These algorithms will then be applied onreal-world semiconductor structures to help enable a new paradigm incharacterization that supports development of evermore advanced devices.

Type of internship: Master internship

Duration: 6 months

Required educational background: Physics

Supervising scientist(s): For further information or for application, please contact Vitaly Krasnov ( [e-mail] )

The reference code for this position is 2026-INT-296. Mention this reference code in your application.

Only for self-supporting students.

University promotor: Claudia Fleischmann (KU Leuven)

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