Optimization of sample preparation procedures for quantitative Scanning Spreading Resistance Microscopy measurements

Imec; Vlaams-Brabant; On-site; EUR 13,000 - 20,000; Full time

Benefits offered by this job

Imec allowance

Job summary

Imec is offering a Master internship in Belgium (Vlaams-Brabant) focused on optimizing sample preparation procedures for quantitative Scanning Spreading Resistance Microscopy (SSRM) measurements. The student will evaluate and fine-tune how to prepare and measure samples at the nanometer scale, with emphasis on polishing conditions and calibration samples.

The project involves training in scanning probe microscopy, quantitative SSRM, and parameter optimization, under supervision.

Qualifications

• Master internship in Electrotechnics/Electrical Engineering, Physics, Materials Engineering or Nanoscience & Nanotechnology.
• English proficiency required.
• 6 months duration.

Responsibilities

• Investigate how polishing conditions affect SSRM electrical characteristics.
• Train in scanning probe microscopy and quantitative SSRM.
• Coordinate with supervisors and use reference samples for calibration.

Skills

English language

Education

Electrotechnics/Electrical Engineering

Physics

Materials Engineering

Nanoscience & Nanotechnology

Tools

Scanning Probe Microscopy

SSRM

Job description

/ Optimization of sample preparation procedures for quantitative Scanning Spreading Resistance Microscopy measurements

Optimization of sample preparation procedures for quantitative Scanning Spreading Resistance Microscopy measurements

You evaluate and fine tune ways on how to prepare and measure samples on the nanometer scale.

The continued scalingof semiconductor devices requires advanced characterization techniques capableof probing local electrical properties with nanoscale spatial resolution. Scanningspreading resistance microscopy (SSRM) is a unique technique by offering theability to perform carrier density mapping of complex structures and deviceswith a nanometer spatial resolution. What makes it even more powerful is its abilityto provide quantitative results by the use of calibration samples inconjunction with device measurements. For this, the measured resistance valuesof the calibration stacks are compared to measured resistance values in devices.The values measured in the devices can then be converted to carrierconcentration values. Although this is a well established workflow, numerousartefacts areknown to arise whenpreparing cross sections for SSRM, some of which are known to alter the electricalproperties. Therefore, quantification can only be accurate when the measuredsurfaces are defect-free or prepared in the exact same way as the calibrationsamples.

This project aims toexplore and establish the effects of the existing sample preparation proceduresused for SSRM on the obtained surfaces. These include, but are not limited to,cleaving, polishing and focused ion beam treatments. A particular focus will beplaced on the impact of different polishing conditions on the electricalcharacteristics measured by SSRM on the prepared surfaces.

The internship student willinvestigate how parameters such as polishing agents and type of polishingcloths, but also temperature and ambient conditions, influence the SSRMresponse. Where appropriate, other complementary chemical and mechanicalanalysis techniques could be used to get a better understanding of the results.Measurements on well-defined reference samples will be used to establish therelationship between the different sample preparation parameters and the measuredelectrical resistances of the surfaces.

Forthis research, the student will be trained in scanning probe microscopy, with aparticular emphasis on quantitative SSRM and its associated sample preparationtechniques, such as cleaving and polishing. The research will also include parameteroptimization and data analysis of the resulting measurements.

With the guidance ofthe supervisors, practical experimentation will be a major part of thethesis/internship. Complementary characterization and analysis can be performedthrough existing collaborations and available facilities. The project thereforeprovides an opportunity to combine sample preparation methods and experimentalscanning probe microscopy with electrical characterization and quantitativedata analysis.

Agood command of English is necessary.

Type of internship: Master internship

Duration: 6 months

Required educational background: Electrotechnics/Electrical Engineering, Physics, Materials Engineering, Nanoscience & Nanotechnology

Supervising scientist(s): For further information or for application, please contact Thomas Hantschel ( [e-mail] ) and Lennaert Wouters ( [e-mail] ) and Pieter Lagrain ( [e-mail] )

The reference code for this position is 2026-INT-321. Mention this reference code in your application.

Imec allowance will be provided.

The continued scalingof semiconductor devices requires advanced characterization techniques capableof probing local electrical properties with nanoscale spatial resolution. Scanningspreading resistance microscopy (SSRM) is a unique technique by offering theability to perform carrier density mapping of complex structures and deviceswith a nanometer spatial resolution. What makes it even more powerful is its abilityto provide quantitative results by the use of calibration samples inconjunction with device measurements. For this, the measured resistance valuesof the calibration stacks are compared to measured resistance values in devices.The values measured in the devices can then be converted to carrierconcentration values. Although this is a well established workflow, numerousartefacts areknown to arise whenpreparing cross sections for SSRM, some of which are known to alter the electricalproperties. Therefore, quantification can only be accurate when the measuredsurfaces are defect-free or prepared in the exact same way as the calibrationsamples.

This project aims toexplore and establish the effects of the existing sample preparation proceduresused for SSRM on the obtained surfaces. These include, but are not limited to,cleaving, polishing and focused ion beam treatments. A particular focus will beplaced on the impact of different polishing conditions on the electricalcharacteristics measured by SSRM on the prepared surfaces.

The internship student willinvestigate how parameters such as polishing agents and type of polishingcloths, but also temperature and ambient conditions, influence the SSRMresponse. Where appropriate, other complementary chemical and mechanicalanalysis techniques could be used to get a better understanding of the results.Measurements on well-defined reference samples will be used to establish therelationship between the different sample preparation parameters and the measuredelectrical resistances of the surfaces.

Forthis research, the student will be trained in scanning probe microscopy, with aparticular emphasis on quantitative SSRM and its associated sample preparationtechniques, such as cleaving and polishing. The research will also include parameteroptimization and data analysis of the resulting measurements.

With the guidance ofthe supervisors, practical experimentation will be a major part of thethesis/internship. Complementary characterization and analysis can be performedthrough existing collaborations and available facilities. The project thereforeprovides an opportunity to combine sample preparation methods and experimentalscanning probe microscopy with electrical characterization and quantitativedata analysis.

Agood command of English is necessary.

Type of internship: Master internship

Duration: 6 months

Required educational background: Electrotechnics/Electrical Engineering, Physics, Materials Engineering, Nanoscience & Nanotechnology

Supervising scientist(s): For further information or for application, please contact Thomas Hantschel ( [e-mail] ) and Lennaert Wouters ( [e-mail] ) and Pieter Lagrain ( [e-mail] )

The reference code for this position is 2026-INT-321. Mention this reference code in your application.

Imec allowance will be provided.

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