Engineering GeSn Thin Films for Efficient MWIR Photodetectors

Imec; Vlaams-Brabant; On-site; EUR 13,000 - 20,000; Full time

Benefits offered by this job

Master internship

Imec allowance for non-Belgian univer.

Job summary

Imec in Belgium invites a Master internship candidate to explore and develop GeSn-based thin-film absorbers for MWIR photodetection. The project focuses on fabricating and characterizing GeSn layers with tailored compositions and thicknesses to achieve the desired spectral response and device integration.

After initial training, you will work in a cleanroom and laboratory, gaining hands-on experience in semiconductor processing and electrical/optical characterization, with iterative feedback to

Qualifications

• Background in materials engineering or related field.
• Strong foundation in nanoscience and nanotechnology.
• Engineering-oriented analytical and problem-solving skills.

Responsibilities

• Explore and develop GeSn-based thin-film absorbers for MWIR photodetection.
• Fabricate and characterize GeSn layers with tailored compositions and thicknesses.
• Work on device integration, including photodetector fabrication and performance evaluation.
• Gain hands-on experience in semiconductor processing and electrical/optical characterization.
• Iteratively optimize material quality and detector performance under guidance.

Education

Materials Engineering

Nanoscience & Nanotechnology

Electrotechnics/Electrical Engineering

Chemistry/Chemical Engineering

Job description

/ Engineering GeSn Thin Films for Efficient MWIR Photodetectors

Engineering GeSn Thin Films for Efficient MWIR Photodetectors

Powering the future of infrared imaging and sensing

In recent years, infrared imaging technologies have expanded rapidlyacross applications such as environmental monitoring, thermal imaging,industrial inspection, and security. In particular, the mid-wave infrared(MWIR) spectral range is highly relevant for these applications due to itssensitivity to thermal emissions and molecular signatures. Today’sstate-of-the-art MWIR detectors are typically based on III-V semiconductors such as InSb or HgCdTe, which offer excellent performance but are expensive and challenging to integrate with standard CMOS technology.

As a group-IV material system, germanium-tin (GeSn) has emerged as a promising alternative for infrared photonics. By incorporating tin into germanium, the bandgap can be engineered and extended into the MWIR range while maintaining compatibility with silicon-based fabrication platforms. This enables the development of cost-effective, scalable, and CMOS-compatible photodetectors. However, challenges remain in material growth, defect control, and device optimization to achieve high-performance MWIR detection.

The goal of this internship/master’s thesis project is to explore and develop GeSn-based thin-film absorbers for MWIR photodetection. The project will focus on the fabrication and characterization of GeSn layers with tailored compositions and thicknesses to achieve the desired spectral response. The candidate will work on device integration, including photodetector fabrication and performance evaluation.

After an initial training period, the selected candidate will work independently in a cleanroom and laboratory environment. The student will gain hands-on experience in semiconductor processing, as well as electrical and optical characterization techniques. Experimental feedback will be used to iteratively optimize material quality and device performance. The candidate will also be exposed to a broad range of structural and compositional analysis methods.

The work will be conducted within an international research team, providing continuous support and guidance. The ideal candidate is highly motivated, enjoys hands‑on experimental work, and has strong problem‑solving and data analysis skills. Given the international working environment, a good command of English is required.

Required educational background: Materials Engineering, Nanoscience & Nanotechnology, Electrotechnics/Electrical Engineering, Chemistry/Chemical Engineering

University promotor: Jan Genoe (KU Leuven)

Supervising scientist(s): Isabel Pintor Monroy ( [e-mail] )

The reference code for this position is 2026-INT-204. Mention this reference code in your application.

Imec allowance will be provided for students studying at a non-Belgian university.

In recent years, infrared imaging technologies have expanded rapidlyacross applications such as environmental monitoring, thermal imaging,industrial inspection, and security. In particular, the mid-wave infrared(MWIR) spectral range is highly relevant for these applications due to itssensitivity to thermal emissions and molecular signatures. Today’sstate-of-the‑art MWIR detectors are typically based on III-V semiconductors such as InSb or HgCdTe, which offer excellent performance but are expensive and challenging to integrate with standard CMOS technology.

As a group‑IV material system, germanium‑tin (GeSn) has emerged as a promising alternative for infrared photonics. By incorporating tin into germanium, the bandgap can be engineered and extended into the MWIR range while maintaining compatibility with silicon‑based fabrication platforms. This enables the development of cost‑effective, scalable, and CMOS‑compatible photodetectors. However, challenges remain in material growth, defect control, and device optimization to achieve high‑performance MWIR detection.

The goal of this internship/master’s thesis project is to explore and develop GeSn‑based thin‑film absorbers for MWIR photodetection. The project will focus on the fabrication and characterization of GeSn layers with tailored compositions and thicknesses to achieve the desired spectral response. The candidate will work on device integration, including photodetector fabrication and performance evaluation.

After an initial training period, the selected candidate will work independently in a cleanroom and laboratory environment. The student will gain hands‑on experience in semiconductor processing, as well as electrical and optical characterization techniques. Experimental feedback will be used to iteratively optimize material quality and device performance. The candidate will also be exposed to a broad range of structural and compositional analysis methods.

The work will be conducted within an international research team, providing continuous support and guidance. The ideal candidate is highly motivated, enjoys hands‑on experimental work, and has strong problem‑solving and data analysis skills. Given the international working environment, a good command of English is required.

For more information or application, pleasecontact IsabelPintor ( [e-mail] )

Type of internship: Master internship

Duration: 6-12 months

Required educational background: Materials Engineering, Nanoscience & Nanotechnology, Electrotechnics/Electrical Engineering, Chemistry/Chemical Engineering

University promotor: Jan Genoe (KU Leuven)

Supervising scientist(s): Isabel Pintor Monroy ( [e-mail] )

The reference code for this position is 2026-INT-204. Mention this reference code in your application.

Imec allowance will be provided for students studying at a non-Belgian university.

imec's cleanroom