Staff Engineer, GaN Power Devices & TCAD

Infineon; Villach; On-site; EUR 70,000 - 105,000; Full time

Job summary

Infineon Technologies AG in Austria is seeking a researcher to design GaN HEMT concepts, perform TCAD simulations, and translate results into manufacturable power devices. You will calibrate models with experimental data and develop SPICE representations for real-world applications.

The role emphasizes collaboration with process, design, modelling, reliability and application teams to drive energy efficiency improvements.

Qualifications

• Master's or PhD in Physics, Electrical Engineering or power electronics.
• 3+ years of industry or research experience in TCAD or device engineering.

Responsibilities

• Device concept engineering of future GaN HEMT structures.
• Simulate the FoMs of GaN power transistors (Ron*A, Ron*Qg, Ron*Qoss).
• Provide first simulated electrical characteristics for SPICE models.
• Calibrate TCAD models on experimental data (static/dynamic).
• Run mixed TCAD-SPICE simulations to optimize devices for target applications.
• Translate simulation results into manufacturable power device products.
• Document results and present clear recommendations.

Skills

TCAD simulation

Device engineering

Power electronics

Education

Master's or PhD in Physics/EE/Power Electronics

Tools

TCAD

SPICE

Job description

Infineon Technologies AG in Austria is seeking a researcher to design GaN HEMT concepts, perform TCAD simulations, and translate results into manufacturable power devices. You will calibrate models with experimental data and develop SPICE representations for real-world applications.

The role emphasizes collaboration with process, design, modelling, reliability and application teams to drive energy efficiency improvements.