Staff Engineer Wafer Technology and Device Development (f/m/div)

Infineon; Villach; Sur place; EUR 70 000 - 105 000; Plein temps

Résumé du poste

Infineon Technologies AG in Austria is seeking a researcher to design GaN HEMT concepts, perform TCAD simulations, and translate results into manufacturable power devices. You will calibrate models with experimental data and develop SPICE representations for real-world applications.

The role emphasizes collaboration with process, design, modelling, reliability and application teams to drive energy efficiency improvements.

Qualifications

• Master's or PhD in Physics, Electrical Engineering or power electronics.
• 3+ years of industry or research experience in TCAD or device engineering.

Responsabilités

• Device concept engineering of future GaN HEMT structures.
• Simulate the FoMs of GaN power transistors (Ron*A, Ron*Qg, Ron*Qoss).
• Provide first simulated electrical characteristics for SPICE models.
• Calibrate TCAD models on experimental data (static/dynamic).
• Run mixed TCAD-SPICE simulations to optimize devices for target applications.
• Translate simulation results into manufacturable power device products.
• Document results and present clear recommendations.

Connaissances

TCAD simulation

Device engineering

Power electronics

Formation

Master's or PhD in Physics/EE/Power Electronics

Outils

TCAD

SPICE

Description du poste

Gallium Nitride is a real game changer for decarbonization and digitalization: converting power far more efficiently than other semiconductor materials. Joining our team, you'll design future GaN HEMT concepts hands-on, from TCAD simulation and calibration to manufacturable power products, making a real impact on energy efficiency and CO2 reduction.

Responsibilities

• Device concept engineering of future advanced GaN HEMT cell structures: explore new device architectures, layer stacks and field-management concepts for power transistors
• Simulate the Figures of Merit (FoM) of GaN power transistors, such as Ron*A, Ron*Qg, Ron*Qoss etc.
• Provide the first simulated electrical characteristics of new GaN HEMT concepts as the basis for developing behavioural SPICE models
• Calibrate TCAD models on experimental data, using both static and dynamic measurements
• Run mixed-mode simulations combining TCAD and SPICE to optimize devices for target applications such as IBC (intermediate bus converters), buck and boost converters and other power conversion topologies
• Design power device products by translating simulation results into robust, manufacturable products in close collaboration with process, design, modelling, reliability and application teams
• Document and present results, and give clear recommendations to technology development, product engineering and management

Qualifications

• A master or PhD degree in Physics, Electrical Engineering, Power Electronics or a comparable technical discipline
• 3+ years of relevant industry or research experience in TCAD simulation, device engineering or technology development, ideally in the field of power semiconductors

We are on a journey to create the best Infineon for everyone. We strive to create the best Infineon for everyone by embracing diversity and inclusion. We welcome applicants for who they are and offer a workplace built on trust, openness, respect and equal opportunity. Our hiring decisions are based on skills and experience. Even if you don't meet every requirement, we encourage you to apply. Please let your recruiter know if you need any accommodations during the interview process.

Learn more about our various contact channels and about Diversity & Inclusion at Infineon. Elisabeth Franz LinkedIn Profile