Director, Ultra-High-Voltage SiC Power Devices

Navitas Semiconductor; Torrance (CA); On-site; USD 200,000 - 250,000; Full time

Benefits offered by this job

Health, dental, and vision coverage

Unlimited PTO

Equity awards

Competitive compensation package

Job summary

Navitas Semiconductor seeks a seasoned R&D leader in SiC HV devices to drive ultra-high-voltage technology from 3.3 kV to 10 kV+. You will guide device architecture, process integration with partners, and reliability methods while mentoring engineers across multiple sites.

You will lead government-funded programs, translate TCAD results into design changes, and contribute to IP through publications and patents, advancing Navitas' power-electronics portfolio for AI data centers and

Qualifications

• Ph.D. in Electrical Engineering, Physics, Materials Science or related field.
• 12+ years of industrial or national-lab R&D in SiC power devices, ultra-high-voltage switches.
• Proven design, fabrication and characterization of SiC devices rated 3.3 kV or above.
• Hands-on depth in SiC process technology: implantation, oxidation, contacts, etching, edge termination.
• Experience as technical lead or PI on externally funded programs with milestones.
• Strong publication and/or patent record in SiC power devices.
• Must be a U.S. person.

Responsibilities

• Lead device architecture and process technology for ultra-high-voltage SiC devices.
• Serve as technical lead on U.S. government-funded development programs.
• Define process flows with foundry and research partners; manage split-lot experiments.
• Direct device simulation, mask design reviews and characterization plans.
• Establish ultra-high-voltage characterization and reliability methods.
• Mentor device engineers across U.S. and India sites.
• Develop IP and support customers on ultra-high-voltage product definition.

Skills

SiC device physics

Edge termination design

TCAD-driven design

High-voltage test methods

Academic publication writing

Leadership & mentoring

Education

Ph.D. in Electrical Engineering or related field

Tools

TCAD

HV measurement equipment

Job description

Navitas Semiconductor seeks a seasoned R&D leader in SiC HV devices to drive ultra-high-voltage technology from 3.3 kV to 10 kV+. You will guide device architecture, process integration with partners, and reliability methods while mentoring engineers across multiple sites.

You will lead government-funded programs, translate TCAD results into design changes, and contribute to IP through publications and patents, advancing Navitas' power-electronics portfolio for AI data centers and