Senior HBM Design Architect for Next-Gen Memory

Micron Technology, Inc; Boise (ID); On-site; USD 130,000 - 180,000; Full time

Benefits offered by this job

Medical, dental, and vision plans

Paid time-off and holidays

Paid family leave

Job summary

A leading semiconductor firm is seeking a Principal HBM Design Architect to design and optimize advanced DRAM circuits for high-performance solutions. In this role, you will collaborate with global teams on innovative HBM products aimed at AI and ML applications. The ideal candidate will possess strong experience in CMOS circuit design and semiconductor device physics, with the ability to analyze complex designs. Join us to impact the future of technology significantly.

Qualifications

• 7+ years of experience with BSEE or 5+ years with MSEE.
• Strong knowledge of semiconductor device physics.
• Proficiency in schematic entry and simulation.

Responsibilities

• Design, simulate, and optimize DRAM memory arrays.
• Analyze timing, area, power, and complexity trade-offs.
• Collaborate across multi-functional teams on HBM solutions.

Skills

CMOS circuit design

Debugging

Analytical skills

Scripting languages (Python, Tcl, Perl)

Education

BSEE or MSEE

Tools

FineSim

HSPICE

Job description

A leading semiconductor firm is seeking a Principal HBM Design Architect to design and optimize advanced DRAM circuits for high-performance solutions. In this role, you will collaborate with global teams on innovative HBM products aimed at AI and ML applications. The ideal candidate will possess strong experience in CMOS circuit design and semiconductor device physics, with the ability to analyze complex designs. Join us to impact the future of technology significantly.