HBM Design Architect — AI-ready DRAM, Equity Options

Micron Technology; Folsom (CA); On-site; USD 146,000 - 297,000; Full time

Benefits offered by this job

Medical, dental, and vision plans

Paid family leave

Robust paid time-off

Paid holidays

Job summary

Micron Technology is seeking an experienced HBM Design Architect in Folsom, California, to design and analyze digital and analog circuits for advanced HBM products. In this role, you will contribute to memory architecture for AI and high-performance computing. The ideal candidate has a Bachelor's degree in Electrical Engineering, knowledge of CMOS design, and at least 3 years of experience. Compensation ranges from $146,000 to $297,000 annually, with benefits.

Qualifications

• 3+ years of relevant engineering experience.
• Strong knowledge of semiconductor device physics.
• Experience with advanced DRAM architectures such as 3D DRAM is preferred.

Responsibilities

• Design and analyze digital and analog DRAM circuits including simulation.
• Evaluate full‑chip or block‑level functionality.
• Analyze timing, power, area, and complexity trade‑offs.

Skills

CMOS circuit design

Problem-solving skills

Analytical skills

Education

Bachelor’s degree in Electrical Engineering or related field

Master’s degree or higher in Electrical Engineering or related field

Tools

FineSim

HSPICE

Job description

Micron Technology is seeking an experienced HBM Design Architect in Folsom, California, to design and analyze digital and analog circuits for advanced HBM products. In this role, you will contribute to memory architecture for AI and high-performance computing. The ideal candidate has a Bachelor's degree in Electrical Engineering, knowledge of CMOS design, and at least 3 years of experience. Compensation ranges from $146,000 to $297,000 annually, with benefits.