Senior Diffusion & Gate Dielectric Engineer - DRAM

Micron Technology, Inc.; Boise (ID); On-site; USD 100,000 - 140,000; Full time

Benefits offered by this job

Medical, dental, and vision plans

Paid family leave

Paid time-off and holidays

Job summary

A leading semiconductor company in Boise, ID, is seeking a Principal Diffusion Process Development Engineer to lead the advancement of FEOL diffusion processes for advanced DRAM technologies. The ideal candidate will have a PhD and a strong background in device physics and process scaling. You will drive innovations and collaborate with cross-functional teams to ensure the execution of the latest technologies. A competitive benefits package and a culture that values personal wellbeing and professional growth await the right candidate.

Qualifications

• PhD with 4+ years of experience in relevant field.
• Strong background in MOS device behavior.
• Demonstrated experience scaling processes to manufacturing readiness.

Responsibilities

• Lead FEOL diffusion and gate oxidation operations in DRAM technology.
• Develop ultra-thin gate dielectrics focusing on performance and manufacturability.
• Drive process development from concept through to manufacturing transfer.

Skills

Device physics

Diffusion processes

Oxidation principles

Analytical skills

Communication skills

Education

PhD in Chemical Engineering, Materials Science, Physics, or similar

Tools

TEM

SIMS

XPS

AFM

SEM

Job description

A leading semiconductor company in Boise, ID, is seeking a Principal Diffusion Process Development Engineer to lead the advancement of FEOL diffusion processes for advanced DRAM technologies. The ideal candidate will have a PhD and a strong background in device physics and process scaling. You will drive innovations and collaborate with cross-functional teams to ensure the execution of the latest technologies. A competitive benefits package and a culture that values personal wellbeing and professional growth await the right candidate.