Principal Diffusion Process Development Engineer, DRAM

Micron Technology, Inc; Boise (ID); On-site; USD 100,000 - 130,000; Full time

Benefits offered by this job

Medical, dental, and vision plans

Paid time off

Paid family leave

Job summary

Micron Technology, Inc in Boise, Idaho is searching for a Principal Diffusion Process Development Engineer to lead FEOL diffusion operations and innovations in advanced DRAM devices. The candidate will require a PhD and extensive expertise in diffusion processes and device physics.

This role involves collaboration across engineering and manufacturing, focusing on gate dielectric scaling and process reliability. Micron provides a competitive benefits package, including medical, dental, and paid time off.

Qualifications

• PhD in Chemical Engineering, Materials Science, Chemistry, Physics, or Electrical Engineering with 4+ years of experience.
• Strong background in device physics, particularly MOS device behavior.
• Extensive knowledge of thermal processing and dopant behavior.

Responsibilities

• Lead FEOL diffusion and gate oxidation operations.
• Develop ultra-thin gate dielectrics balancing performance and manufacturability.
• Drive process development from concept through integration.

Skills

Device physics knowledge

Diffusion principles

Oxidation principles

Analytical skills

Communication skills

Education

PhD in relevant field

Tools

Diffusion equipment

Oxidation equipment

Characterization techniques (TEM, SIMS, etc.)

Job description

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

As a Principal Diffusion Process Development Engineer, you will act as a technical leader accountable for FEOL diffusion, annealing, and gate oxidation process advancement for advanced DRAM devices. This position emphasizes gate dielectric scaling, process reliability, and manufacturing preparedness. The ideal candidate blends extensive expertise in diffusion processes, oxidation principles, and device physics with practical experience transitioning technologies from development to production. You will collaborate closely with groups dedicated to process development, device engineering, equipment, and manufacturing to support future technology nodes.

Key Responsibilities

• Lead the progress of FEOL diffusion, thermal treatment, and gate oxidation operations in advanced DRAM technology.
• Develop and scale ultra-thin gate dielectrics, balancing electrical performance, reliability, variability, and manufacturability.
• Own the interaction between process conditions, materials behavior, and diffusion hardware.
• Drive process development from concept through integration, pilot qualification, and manufacturing transfer.
• Evaluate, qualify, and optimize diffusion and oxidation equipment platforms and reactor builds.
• Define and monitor manufacturing metrics, including statistical process control, process capability, defectivity, and variability.
• Plan, complete, and analyze built experiments, and clearly detail technical results.
• Interpret electrical, physical, and materials characterization data to guide development decisions.
• Work together with process R&D, process integration, device engineering, equipment engineering, and manufacturing.
• Partner with external suppliers to develop hardware and processes aligned with future technology needs.
• Generate intellectual property and technical documentation supporting process innovation.
• Act as a technical subject-matter expert, supporting engineers who are developing their skills as needed.

Required Qualifications

• PhD in Chemical Engineering, Materials Science, Chemistry, Physics, Electrical Engineering, or a closely related field with 4+ years of experience.
• Strong background in device physics, particularly MOS device behavior.
• Extensive knowledge of diffusion and oxidation principles, including thermal processing, reaction kinetics, dopant behavior and activation, interface and defect control.
• Practical experience working with diffusion and oxidation equipment in laboratory or cleanroom settings.
• Demonstrated experience scaling processes to manufacturing readiness, including SPC and process control.
• Strong analytical skills and ability to extract insight from complex datasets.
• Excellent written and verbal communication skills.

Preferred Experience

• Experience in gate dielectric reduction within advanced DRAM and/or logic technologies.
• Familiarity with FEOL integration challenges, including variability and reliability considerations.
• Experience with characterization techniques such as TEM, SIMS, XPS, AFM, SEM, ellipsometry, and electrical measurements.
• Proven ability to lead technical projects independently and influence cross‑functional teams.
• Experience working directly with equipment vendors on tool and process development.

What Sets You Apart

• You take ownership of processes from early development through manufacturing.
• You apply strong fundamental physics insight alongside practical engineering judgment.
• You thrive in a collaborative, fast‑paced R&D environment.
• You are motivated by solving complex problems that enable future memory technologies.

Micron offers a choice of medical, dental, and vision plans in all locations; facilitates paid time‑off, paid holidays, and paid family leave; and provides benefit programs to protect income in case of illness or injury.

Micron is proud to be an equal‑opportunity workplace and an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity, or any other factor protected by applicable federal, state, or local laws.