Principal Diffusion & Gate Dielectric Engineer — DRAM

Micron Technology, Inc; Boise (ID); On-site; USD 100,000 - 130,000; Full time

Benefits offered by this job

Medical, dental, and vision plans

Paid time off

Paid family leave

Job summary

Micron Technology, Inc in Boise, Idaho is searching for a Principal Diffusion Process Development Engineer to lead FEOL diffusion operations and innovations in advanced DRAM devices. The candidate will require a PhD and extensive expertise in diffusion processes and device physics.

This role involves collaboration across engineering and manufacturing, focusing on gate dielectric scaling and process reliability. Micron provides a competitive benefits package, including medical, dental, and paid time off.

Qualifications

• PhD in Chemical Engineering, Materials Science, Chemistry, Physics, or Electrical Engineering with 4+ years of experience.
• Strong background in device physics, particularly MOS device behavior.
• Extensive knowledge of thermal processing and dopant behavior.

Responsibilities

• Lead FEOL diffusion and gate oxidation operations.
• Develop ultra-thin gate dielectrics balancing performance and manufacturability.
• Drive process development from concept through integration.

Skills

Device physics knowledge

Diffusion principles

Oxidation principles

Analytical skills

Communication skills

Education

PhD in relevant field

Tools

Diffusion equipment

Oxidation equipment

Characterization techniques (TEM, SIMS, etc.)

Job description

Micron Technology, Inc in Boise, Idaho is searching for a Principal Diffusion Process Development Engineer to lead FEOL diffusion operations and innovations in advanced DRAM devices. The candidate will require a PhD and extensive expertise in diffusion processes and device physics.

This role involves collaboration across engineering and manufacturing, focusing on gate dielectric scaling and process reliability. Micron provides a competitive benefits package, including medical, dental, and paid time off.