Lead Diffusion & Gate Dielectric Engineer (DRAM)

Micron Technology, Inc; Boise (ID); On-site; USD 120,000 - 160,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid family leave

Robust paid time-off program

Job summary

A leading semiconductor company in Boise, Idaho is looking for a Principal Diffusion Process Development Engineer specializing in FEOL diffusion and oxidation processes for advanced DRAM devices. You will lead process development, evaluate manufacturing metrics, and collaborate closely with technical teams. The ideal candidate should have a PhD and extensive experience in diffusion processes and device physics. Micron offers a variety of benefits, including healthcare and paid leave, reinforcing their commitment to employee wellbeing.

Qualifications

• PhD in relevant field with 4+ years of experience.
• Strong background in device physics and MOS behavior.
• Practical experience with diffusion and oxidation equipment.

Responsibilities

• Lead FEOL diffusion and gate oxidation operations.
• Develop ultra-thin gate dielectrics.
• Drive process development from concept to manufacturing.

Skills

Device physics understanding

Knowledge of diffusion and oxidation principles

Analytical skills

Communication skills

Education

PhD in Chemical Engineering, Materials Science, or related field

Tools

TEM

SIMS

XPS

AFM

SEM

Ellipsometry

Job description

A leading semiconductor company in Boise, Idaho is looking for a Principal Diffusion Process Development Engineer specializing in FEOL diffusion and oxidation processes for advanced DRAM devices. You will lead process development, evaluate manufacturing metrics, and collaborate closely with technical teams. The ideal candidate should have a PhD and extensive experience in diffusion processes and device physics. Micron offers a variety of benefits, including healthcare and paid leave, reinforcing their commitment to employee wellbeing.