R&D Process Integration Engineer – 28/22nm CMOS

Texas Instruments

Lehi (UT)

Vor Ort

USD 120.000 - 160.000

Vollzeit

vor 1 Stunde

Sei unter den ersten Bewerbenden

Erhalte eine Antwort von diesem Arbeitgeber

Dein Lebenslauf und dein Anschreiben, genau auf das zugeschnitten, was gesucht wird.

Schaffe es an den ATS-Filtern vorbei

Zusammenfassung

Texas Instruments in Lehi, Utah is seeking an experienced Process Integration Engineer to drive 28nm/22nm technology development for embedded and analog products. You will collaborate with a cross-functional team to define process requirements, run DOE studies, and push parametric and yield improvements on a modern 300mm fab.

Responsibilities include applying device physics, data analysis and simulations to advance process and device performance while partnering with process, reliability,

Qualifikationen

Master’s degree in electrical engineering or related semiconductor field.
3+ years in a semiconductor factory environment, with advanced CMOS tech experience.
Proven strength in DOE, data analysis and translating learning into improvements.

Aufgaben

Apply device physics and model-based problem solving to resolve integration issues and yield improvements.
Help define process requirements, specifications, and success criteria for process flows.
Drive process and device improvements through characterization, DOE, data analysis and simulations.
Apply BKMs for advanced CMOS nodes below 28nm.
Collaborate with process, integration, reliability, packaging and test teams to meet program goals.
Work with product groups to optimize process performance for differentiated products.

Kenntnisse

DOE

Data analysis

Process optimization

Cross-functional collaboration

Ausbildung

M.S. in Electrical Engineering

Semiconductor-focused discipline (solid-state/ applied physics)

Tools

HKMG expertise

Jobbeschreibung