Principal GaN Process Development Engineer

Polar Semiconductor, LLC; BLOOMINGTON (MN); On-site; USD 125,000 - 165,000; Full time

Benefits offered by this job

Health insurance

Dental insurance

Vision insurance

Disability insurance

Life insurance

401(k) with company match

Paid time off

Annual bonus

Tuition reimbursement

Job summary

Polar Semiconductor, LLC in Bloomington, MN seeks an engineer to develop/transfer, optimize, and document the process flow and macro modules for GaN on Silicon (HEMT) devices that meet performance goals.

You will characterize devices to ensure reliability, evaluate new process opportunities, and work with Process and Device Engineers to achieve first-pass success and robust test chips. The role includes weekly updates to management and customers.

Qualifications

• Masters or PhD in Electrical Engineering, Physics or Materials Science.
• 5+ years of relevant experience in semiconductor development or transfer.
• Experience with process simulations and data analysis.

Responsibilities

• Set up and perform process and device simulations to determine initial parameters.
• Design and perform experiments to optimize new process flows.
• Analyze data from fabrication of test lots to identify optimization needs.
• Collaborate with Process Engineering to develop and optimize modules.
• Support initial test chip processing and transfer lots to achieve first-pass success.
• Provide inputs to Device Engineers to develop layout rules and test structures.
• Recommend test structures and contribute to test chip mask layouts.
• Provide weekly, monthly, quarterly development updates to upper management and customers.
• Support quality, safety, CQI, yield management and cost containment initiatives.

Skills

JMP

Spotfire

TCAD

Education

Master's or PhD in Electrical Engineering / Physics / Materials Science

Tools

JMP

Spotfire

TCAD

Job description

Polar Semiconductor, LLC in Bloomington, MN seeks an engineer to develop/transfer, optimize, and document the process flow and macro modules for GaN on Silicon (HEMT) devices that meet performance goals.

You will characterize devices to ensure reliability, evaluate new process opportunities, and work with Process and Device Engineers to achieve first-pass success and robust test chips. The role includes weekly updates to management and customers.