Senior GaN Process & Device Engineer (Power)

Polar Semiconductor, LLC

BLOOMINGTON (MN)

On-site

USD 125,000 - 165,000

Full time

14 days+
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Benefits offered by this job

Health, dental, vision insurance
401(k) with company match
Tuition reimbursement

Job summary

Polar Semiconductor, LLC is seeking a senior process engineer to drive GaN on silicon HEMT technology development, optimization, and transfer for manufacturable devices. You will simulate, design experiments, analyze results, and collaborate across design, process, and quality teams to meet performance targets.

The role requires deep device physics knowledge, advanced degrees, and 5+ years in related work. Bloomington, MN will serve as the primary site with a focus on reliability and

Qualifications

  • Advanced degree in a relevant field and 5+ years in a similar role.
  • Experience with developing and transferring new semiconductor processes.
  • Ability to interpret electrical test data and correlate with process parameters.

Responsibilities

  • Set up and perform process and device simulations to determine initial process parameters.
  • Design and perform experiments and analyze results to optimize process flows.
  • Analyze data from fabrication of test lots to identify optimization needs.
  • Collaborate with Process Engineering to develop and optimize process modules.
  • Support initial test chip processing and transfer lots to ensure first-pass success.
  • Provide inputs to Device Engineers to develop layout rules and test structures.
  • Provide regular development updates to management and customers.
  • Support quality, safety, CQI, yield, and cost containment initiatives.

Skills

GaN on silicon HEMT knowledge
Semiconductor device physics (III-V)
Process integration
Data analysis (DoE, JMP)
Power device packaging knowledge
Cross-functional collaboration
TCAD simulations

Education

Masters or PhD in EE/Physics/Material Science

Tools

JMP
Spotfire
TCAD

Job description

Polar Semiconductor, LLC is seeking a senior process engineer to drive GaN on silicon HEMT technology development, optimization, and transfer for manufacturable devices. You will simulate, design experiments, analyze results, and collaborate across design, process, and quality teams to meet performance targets.

The role requires deep device physics knowledge, advanced degrees, and 5+ years in related work. Bloomington, MN will serve as the primary site with a focus on reliability and

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