Principal GaN Technology Development Engineer

Polar Semiconductor, Inc.; BLOOMINGTON (MN); On-site; USD 125,000 - 165,000; Full time

Benefits offered by this job

Health insurance

Dental insurance

Vision insurance

401(k) plan with company match

Paid time off

Annual bonus

Tuition reimbursement

Job summary

Polar Semiconductor, Inc. in Bloomington, Minnesota, seeks a skilled engineer to contribute to the development and optimization of semiconductor devices, emphasizing GaN on Silicon (HEMT) processes. Responsibilities include simulating and analyzing fabrication processes, optimizing device parameters, and ensuring compliance with performance standards. The ideal candidate will hold a Master's or PhD in a relevant field, have extensive experience, and strong knowledge of process integration and device physics. The position offers a competitive salary and benefits package.

Qualifications

• 5+ years of experience in a relevant job function.
• Strong process integration knowledge and semiconductor device physics.
• Experience with process flow design to meet manufacturability metrics.

Responsibilities

• Develop, optimize, and document process flow for semiconductor devices.
• Perform simulations to establish initial process parameters.
• Analyze data from fabrication processes to identify optimization needs.

Skills

GaN on silicon HEMT power devices

Semiconductor device physics

Process Flow Design

Electrical Test Data Interpretation

DoE Design and Data Analysis Tools

TCAD Process Simulations

Education

Masters or PhD in Electrical Engineering, Physics, or Material Science

Job description

JOB SUMMARY

• Contribute to the development/transfer, optimization, and documentation of the overall process flow and macro modules required to fabricate reliable, manufacturable devices on GaN on Silicon (HEMT), which meet parametric and performance goals.
• Characterize, evaluate, and document semiconductor devices to ensure reliability and performance to quality standards.
• Evaluate new opportunities for development and/or transfer of new semiconductor technology and processes.

DUTIES AND RESPONSIBILITIES

• Set up and perform process and device simulations to determine initial process parameters, capabilities, and direction for optimization of new process flows.
• Design and perform experiments and analyze the results to determine the process sequences and parameters which will yield the target device parameters, by using the results of the process simulations or initial test lots as a starting point.
• Analyze data (electrical, in-process measurement or visual inspection) from the fabrication of test lots to determine which parameters require additional optimization.
• Work with Process Engineering to develop, characterize, and optimize process modules.
• Support the processing of the initial test chip and transfer lots fabricated with the new process to identify and correct any problem areas and work to achieve first-pass success.
• Provide inputs to and work with Device Engineers to develop layout rules for the process being developed, using equipment specifications and experimental data.
• Recommend test structures for and contribute to the layout of test chip mask sets to aid in developing the new process and evaluating specific process‑dependencies of device parameters.
• Provide weekly, monthly, quarterly development updates to upper management and external customers.
• Support company initiatives, such as quality, safety and environmental management, CQI, 5S, yield management, and cost containment.
• Perform other duties as required.

KNOWLEDGE, SKILLS, AND ABILITIES

• Strong knowledge of several of the following, as needed to perform exact duties:
  • Strong process integration knowledge of GaN on silicon HEMT power devices
  • Strong knowledge of semiconductor device physics, specially III‑V nitrides
  • Working knowledge of key process modules (Photo, Etch, Thin Films, CMP, MOCVD, etc.)
  • Broad knowledge of GaN market trends and new opportunity evaluation experience preferred
  • Process Integration Experience in CMOS/BCDMOS or Discrete IGBTs/MOSFETs a plus
  • Experience in Process Flow Design to Achieve Manufacturability Metrics and Meet Electrical Test Targets
  • Experience with and Understanding of Electrical Test Data and its Correlation to Process and Cross‑sectional data
  • Experience Interpreting Failure Analysis Results and Familiarity with Failure Analysis techniques
  • Experience with Power Packaging including Assembly and Reliability issues
  • Experience in Backend (BGBM, STM, etc.) Processes
  • Experience in Development of Process, Technology and Design FMEAs
• Skills
  • DoE Design and Data Analysis Tools (JMP, Spotfire)
  • TCAD Process Simulations
  • Reading and Interpretation of Design Layouts
• Abilities
  • Working with and Interpreting Information/Data between Design and Process Teams
  • Driving for Solutions and Collaborating on Cross‑functional Teams
  • Technical Leadership Ability (Education, experience and communication skills)

Typically requires a Masters or PhD in Electrical Engineering, Physics or Material Science and 5+ years of experience in a relevant job function.

What We Offer

Salary: $125,000-$165,000 per year (good‑faith estimate)

Benefits & Other Eligible Compensation: Includes health, dental, vision, disability and life insurance, 401(k) plan with company match, paid time off, annual bonus, and tuition reimbursement.

Polar Semiconductor is an Equal Opportunity Employer and prohibits discrimination and harassment of any kind. We are committed to the principle of equal employment opportunity for all employees and to providing employees with a work environment free of discrimination and harassment. All employment decisions are based on business needs, job requirements, and individual qualifications, without regard to race, color, religion, sex, sexual orientation, gender identity, age, national origin, disability, veteran status, or any other status protected by the laws or regulations in the locations where we operate.