Principal Diffusion Process Development Engineer — DRAM

1000 Micron Technology, Inc.; Boise (ID); On-site; USD 100,000 - 130,000; Full time

Benefits offered by this job

Medical, dental, and vision plans

Income protection programs

Paid family leave

Paid time-off and holidays

Job summary

1000 Micron Technology, Inc. is looking for a Principal Diffusion Process Development Engineer based in Boise, Idaho. This role involves leading FEOL diffusion and gate oxidation operations for advanced DRAM devices, focusing on process reliability and manufacturing preparedness.

The ideal candidate has a PhD and extensive knowledge of diffusion processes and oxidation principles. Benefits include medical, dental, and family leave programs, amongst others.

Qualifications

• 4+ years of experience in a relevant field.
• Strong background in device physics, particularly MOS device behavior.
• Extensive knowledge of diffusion and oxidation principles.

Responsibilities

• Lead FEOL diffusion and gate oxidation operations.
• Develop ultra-thin gate dielectrics balancing performance and reliability.
• Drive process development from concept through manufacturing transfer.

Skills

Device Physics

Diffusion Processes

Oxidation Principles

Statistical Process Control (SPC)

Analytical Skills

Technical Communication

Education

PhD in Chemical Engineering, Materials Science, Chemistry, Physics, Electrical Engineering

Tools

TEM

SIMS

XPS

AFM

SEM

Ellipsometry

Job description

1000 Micron Technology, Inc. is looking for a Principal Diffusion Process Development Engineer based in Boise, Idaho. This role involves leading FEOL diffusion and gate oxidation operations for advanced DRAM devices, focusing on process reliability and manufacturing preparedness.

The ideal candidate has a PhD and extensive knowledge of diffusion processes and oxidation principles. Benefits include medical, dental, and family leave programs, amongst others.