NAND Core Design Engineer - High-Performance Memory

Sandisk; Milpitas (CA); On-site; USD 120,000 - 180,000; Full time

Benefits offered by this job

STI/LTI eligibility

Medical/dental/vision insurance

401(k) program

Job summary

Sandisk in Milpitas, California, is seeking an experienced VLSI Design Engineer to design and evaluate chip architectures for high performance NAND flash, including 3D NAND developments. The role requires strong device fundamentals and memory design exposure, with hands-on simulation and eventual silicon evaluation.

The candidate will work in a fast-moving environment, collaborating across teams to deliver feasible, scalable circuit solutions for next-generation memory technologies.

Qualifications

• Requires MS or BS degree in Electrical Engineering or equivalent with 5+ years of relevant experience.
• Knowledge and/or experience in memory design (DRAM memory, NAND flash memory cell operation) is a big advantage.
• A strong device background and experience with evaluating new process technologies for use in design is preferred.
• The ideal candidate must have proven ability to achieve results in a fast moving, dynamic environment.

Responsibilities

• Designing, developing, modifying and evaluating chip architecture and Core circuit structures for feasibility study of high performance NAND flash, including new, most advanced 3-dimentional NAND memories.
• Evaluation of these circuits through HSPICE, PRIMESIM and VERILOG simulations and through silicon evaluation when the silicon arrives.

Skills

Self-motivated

Team player

Troubleshooting

Multi-tasking

Communication

Education

MS/BS in Electrical Engineering or equivalent

Tools

HSPICE

PRIMESIM

Verilog

Job description

Sandisk in Milpitas, California, is seeking an experienced VLSI Design Engineer to design and evaluate chip architectures for high performance NAND flash, including 3D NAND developments. The role requires strong device fundamentals and memory design exposure, with hands-on simulation and eventual silicon evaluation.

The candidate will work in a fast-moving environment, collaborating across teams to deliver feasible, scalable circuit solutions for next-generation memory technologies.