Memory Architecture Lead — High-Performance NAND Design

1000 Micron Technology, Inc.

San Jose (CA)

Vor Ort

USD 184.000 - 322.000

Vollzeit

14 Tage+

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Benefits dieser Stelle

Medical, dental and vision plans
Paid time off
Paid family leave

Zusammenfassung

1000 Micron Technology, Inc. in San Jose, California is seeking an experienced memory design engineer with over 15 years in non-volatile memory design. The role involves innovating memory solutions and leading multi-functional teams to ensure product manufacturability.

The ideal candidate will have a strong educational background in Electrical Engineering and extensive knowledge of NAND Flash memory. Benefits include comprehensive healthcare plans, paid time off, and more.

Qualifikationen

  • 15+ years of proven experience in non-volatile memory design.
  • Understanding of semiconductor reliability issues including EM and IR analysis.
  • Experience orchestrating AI tools adoption is highly desired.

Aufgaben

  • Innovate and architect memory/storage solutions for high performance.
  • Contribute to the development of new NAND Flash Memory.
  • Drive a multi-functional team in key feature evaluation.

Kenntnisse

Proven experience in non-volatile memory design
Broad knowledge in NAND Flash memory design
Ability to lead a multi-functional team
Good communication skills
Experience with circuit simulators

Ausbildung

BS, MS or Ph.D. in Electrical Engineering

Tools

XA
HSPICE
HSim/FineSim

Jobbeschreibung

1000 Micron Technology, Inc. in San Jose, California is seeking an experienced memory design engineer with over 15 years in non-volatile memory design. The role involves innovating memory solutions and leading multi-functional teams to ensure product manufacturability.

The ideal candidate will have a strong educational background in Electrical Engineering and extensive knowledge of NAND Flash memory. Benefits include comprehensive healthcare plans, paid time off, and more.

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