Memory Quality & Reliability Engineer – Silicon Certification Lead

Intel Corporation; Folsom (CA); Hybrid; USD 156,000 - 220,000; Full time

Job summary

Intel Corporation's Technology Development (TD) Quality and Reliability group seeks a Memory Quality and Reliability Engineer to drive post-silicon memory certification and technology readiness for SRAM, RF, and fuse arrays.

You will analyze large silicon characterization data, develop predictive Vccmin/Vmax models, and drive silicon-to-simulation correlations, collaborating with Design, Device Engineering, PDE, Yield, and overall certification teams to inform PDK releases and product

Qualifications

• Ph.D. in EE/CE/Physics or related with 2+ years semiconductor experience, or MS with 6+ years.
• 2+ years memory testing experience.
• 2+ years of quantitative analysis using DOE, SPC, regression, hypothesis testing or multivariate analysis.
• 2+ years using JMP and Python for data analysis, modeling, automation, or visualization.

Responsibilities

• Plan and execute memory technology certification across SRAM/RF/fuse.
• Define methodologies, test strategies, and readiness criteria for memory array.
• Drive memory characterization across operating conditions to evaluate Vmin, Vmax, aging behavior, variability, and design margins.
• Analyze silicon data to identify performance gaps, failure signatures, systematic trends, and technology risks.
• Develop, validate, and maintain silicon-based Vccmin and Vmax predictive models used for certification, PDK releases, and product guidance.
• Perform silicon-to-simulation (Sil2Sim) correlation assessments and drive understanding of discrepancies between measured silicon behavior and design predictions.
• Collaborate with Yield, Design, Device Engineering, PDE, Defect Rel and FIFA teams to define root-cause hypotheses, resolution paths, and technology improvement recommendations.
• Generate certification reports, readiness assessments, and risk projections that support technology deployment decisions.
• Present technical findings and recommendations to engineering leadership, program teams, and customers.
• Drive continuous improvement of memory certification methodologies, modeling approaches, characterization flows, and data analytics infrastructure.
• Provide technical mentorship and leadership within a highly collaborative cross-functional environment.

Skills

Memory testing

Data analysis

Python

JMP

Education

Ph.D. in Electrical Engineering, Computer Engineering, Physics or related

M.S. in Electrical Engineering, Computer Engineering, Physics, Materials Science, or related

Tools

JMP

Python

SQL

JSL

Job description

Intel Corporation's Technology Development (TD) Quality and Reliability group seeks a Memory Quality and Reliability Engineer to drive post-silicon memory certification and technology readiness for SRAM, RF, and fuse arrays.

You will analyze large silicon characterization data, develop predictive Vccmin/Vmax models, and drive silicon-to-simulation correlations, collaborating with Design, Device Engineering, PDE, Yield, and overall certification teams to inform PDK releases and product