Memory Design Engineer: CMOS & DRAM Innovation

Micron Memory Malaysia Sdn Bhd; Richardson (TX); On-site; USD 150,000 - 190,000; Full time

Job summary

Micron Technology in Richardson, Texas is seeking a Memory Design Engineer to develop and optimize digital, analog, and memory core circuits for advanced DRAM products.

You will perform circuit simulations with FINESIM, HSPICE, and Verilog, drive layout considerations, and collaborate with global teams across design, test, process integration, and marketing to deliver quality, manufacturable memory solutions.

Qualifications

• PhD in Electrical Engineering or related field.
• Strong foundation in CMOS circuit design, VLSI, and analog circuit design.

Responsibilities

• Design and optimize digital, analog, and memory core circuits using CMOS technology.
• Perform circuit simulations and analyses using FINESIM, HSPICE, and VERILOG to evaluate power, performance, reliability, and parasitics.
• Develop circuit floorplans including placement, routing, power distribution, timing, and die size considerations.
• Validate designs through reticle experiments, tape-out revisions, and simulation-to-silicon correlation.
• Collaborate with global teams across design, verification, product engineering, test, process integration, assembly, and marketing to support manufacturability, quality, and cost objectives.

Skills

CMOS circuit design

VLSI

Analog circuit design

Device reliability

Analytical thinking

Problem solving

Collaboration

Education

PhD in Electrical Engineering

Tools

FINESIM

HSPICE

Verilog

Job description

Micron Technology in Richardson, Texas is seeking a Memory Design Engineer to develop and optimize digital, analog, and memory core circuits for advanced DRAM products.

You will perform circuit simulations with FINESIM, HSPICE, and Verilog, drive layout considerations, and collaborate with global teams across design, test, process integration, and marketing to deliver quality, manufacturable memory solutions.