HBM Memory Design Engineer — Innovate & Architect

Micron Technology, Inc; Richardson (TX); On-site; USD 100,000 - 130,000; Full time

Job summary

Micron Technology, Inc seeks a Staff Memory Design Engineer in Richardson, Texas, to design and analyze digital and analog circuits for memory products. You will collaborate across various teams to ensure optimal manufacturing functions, cost, quality, and customer satisfaction.

The role requires strong analytical and problem-solving skills along with experience in CMOS design and DRAM architecture. A BS or MS in Electrical Engineering and 6 years of relevant experience are preferred.

Qualifications

• Understanding of device reliability and circuit floor planning.
• Strong analytical and problem-solving skills.
• Proven significant technical contributions and a record of innovation.

Responsibilities

• Design digital, analog, and memory core circuits using CMOS logic.
• Create optimized floorplans for circuit placement and routing.
• Conduct circuit simulations and analyze performance and reliability.
• Collaborate with global teams to ensure manufacturability and quality.

Skills

CMOS Circuit Design

VLSI

Analog Circuit Design

Cadence Virtuoso

Analytical skills

Problem-solving

DRAM subsystem architecture

Education

BS or MS in Electrical Engineering

Tools

FINESIM

HSPICE

VERILOG

Job description

Micron Technology, Inc seeks a Staff Memory Design Engineer in Richardson, Texas, to design and analyze digital and analog circuits for memory products. You will collaborate across various teams to ensure optimal manufacturing functions, cost, quality, and customer satisfaction.

The role requires strong analytical and problem-solving skills along with experience in CMOS design and DRAM architecture. A BS or MS in Electrical Engineering and 6 years of relevant experience are preferred.