Memory Design Engineer: CMOS & DRAM Innovation

Micron Technology, Inc; Richardson (TX); On-site; USD 100,000 - 130,000; Full time

Benefits offered by this job

Choice of medical, dental, and vision plans

Paid family leave

Robust paid time-off program

Job summary

Micron Technology, Inc is seeking a Memory Design Engineer in Richardson, Texas. This role involves designing and optimizing digital and analog circuits for advanced DRAM products, requiring a PhD in Electrical Engineering or related field.

The ideal candidate will have a strong foundation in CMOS circuit design, VLSI, and analog circuits, alongside proven problem-solving skills. Micron offers a range of benefits aimed at supporting employee well-being and professional growth.

Qualifications

• Strong foundation in CMOS circuit design, VLSI, and analog circuit design.
• Proven analytical and problem-solving skills with demonstrated technical contributions.
• Experience with circuit simulation tools.

Responsibilities

• Design and optimize digital, analog, and memory core circuits.
• Perform circuit simulations and analyses to evaluate power, performance, reliability.
• Collaborate with global teams across design and verification.

Skills

CMOS circuit design

VLSI

Analog circuit design

Problem-solving skills

Collaboration

Education

PhD in Electrical Engineering or related field

Tools

FINESIM

HSPICE

VERILOG

Job description

Micron Technology, Inc is seeking a Memory Design Engineer in Richardson, Texas. This role involves designing and optimizing digital and analog circuits for advanced DRAM products, requiring a PhD in Electrical Engineering or related field.

The ideal candidate will have a strong foundation in CMOS circuit design, VLSI, and analog circuits, alongside proven problem-solving skills. Micron offers a range of benefits aimed at supporting employee well-being and professional growth.