Memory Architecture Lead — NAND Flash Innovation

Micron Technology, Inc; San Jose (CA); On-site; USD 150,000 - 200,000; Full time

Job summary

Micron Technology, Inc. is seeking a Non-Volatile Memory Design Architecture Lead to innovate and execute NAND Flash designs. You will work closely with functional teams, drive architecture decisions, and ensure optimal memory product performance.

The right candidate will have 15+ years of experience in non-volatile memory, a degree in Electrical Engineering, and the ability to work effectively in teams, while driving innovative solutions in a dynamic environment.

Qualifications

• 15+ years of proven experience in non-volatile memory design.
• Broad knowledge and experience in NAND Flash memory design required.
• Proven knowledge of various logic, analog, and mixed signal circuit’s functionality.

Responsibilities

• Innovate and architect innovative memory/storage solutions.
• Contribute to the development of new NAND Flash Memory.
• Drive multi-functional team in key features evaluation.

Skills

Non-volatile memory design

Circuit design

Logic circuits

Analog design

Communication skills

Education

BS, MS or Ph.D in Electrical Engineering

Tools

XA

hspice

hsim/finesim

Job description

Micron Technology, Inc. is seeking a Non-Volatile Memory Design Architecture Lead to innovate and execute NAND Flash designs. You will work closely with functional teams, drive architecture decisions, and ensure optimal memory product performance.

The right candidate will have 15+ years of experience in non-volatile memory, a degree in Electrical Engineering, and the ability to work effectively in teams, while driving innovative solutions in a dynamic environment.