Lead HBM Memory Design Architect (Digital/Analog)

1000 Micron Technology, Inc.; Richardson (TX); On-site; USD 120,000 - 180,000; Full time

Benefits offered by this job

Medical insurance

Dental plan

Paid time off

Paid holidays

Income protection

Job summary

Micron Technology, Inc. in Richardson, TX is seeking an HBM Memory Design Engineer to design, simulate, and optimize digital and analog DRAM circuits used in advanced HBM technology.

You will evaluate block-level functionality, perform timing analyses, and contribute to architecture studies for future high-bandwidth memory solutions. Minimum qualifications include a BSEE with 7+ years (or MSEE with 5+ years) in circuit design, strong CMOS knowledge, and experience with HSPICE/FineSim and

Qualifications

• BSEE with 7+ years or MSEE with 5+ years in circuit design.
• Strong CMOS circuit design knowledge and device physics.
• Experience with HSPICE/FineSim and scripting (Python/Tcl/Perl).

Responsibilities

• Design, simulate, and optimize digital and analog DRAM circuits including data path, ECC, command/control, and high-speed timing structures.
• Evaluate full-chip and block-level functionality and propose solutions to achieve correct circuit and system behavior.
• Perform timing, area, power, and complexity analysis for high-speed DRAM and mixed-signal circuits.
• Conduct pathfinding studies and feasibility analyses for future HBM architectures.
• Contribute to the development, layout, and optimization of memory, logic, and analog circuits.
• Analyze circuit behavior under varying PVT and parasitic conditions to ensure robust operation.
• Collaborate with multi-functional teams across build, verification, product engineering, process, and packaging.
• Support design reviews, documentation, and continuous improvement of design methodologies.

Skills

CMOS circuit design

HSPICE / FineSim

Python scripting

Power distribution analysis

Schematic entry

Device physics

Education

BSEE

MSEE

Tools

HSPICE

FineSim

Job description

Micron Technology, Inc. in Richardson, TX is seeking an HBM Memory Design Engineer to design, simulate, and optimize digital and analog DRAM circuits used in advanced HBM technology.

You will evaluate block-level functionality, perform timing analyses, and contribute to architecture studies for future high-bandwidth memory solutions. Minimum qualifications include a BSEE with 7+ years (or MSEE with 5+ years) in circuit design, strong CMOS knowledge, and experience with HSPICE/FineSim and