Lead HBM Design Architect — High-Speed Memory Innovation

Micron Technology, Inc; Folsom (CA); On-site; USD 130,000 - 180,000; Full time

Benefits offered by this job

Medical, dental, vision plans

Paid family leave

Robust paid time-off program

Job summary

Micron Technology, Inc is seeking a Principal HBM Design Architect to lead the design of high-speed DRAM interfaces for HBM cubes. You will be responsible for command logic and collaborate on full chip testbench development.

The ideal candidate will have extensive experience in DRAM operations, JEDEC specifications, and mixed-signal design, with a strong foundation in problem-solving and collaboration. Join us to innovate and drive next-generation memory solutions!

Qualifications

• Extensive experience with DRAM operation and JEDEC specifications.
• Strong technical expertise in analog and mixed-signal circuit design.
• Hands-on proficiency in DRAM command decoding and bank logic.

Responsibilities

• Responsible for high-speed DRAM and Base die interface in HBM cube.
• Design the DRAM command and control logic.
• Collaborate with data path design on full chip testbench.

Skills

DRAM operation expertise

Analog circuit design

Mixed-signal design

Problem-solving

Communication skills

Education

MS degree in relevant field

15+ years experience with BS degree

Tools

FINESIM

HSPICE

VERILOG

Job description

Micron Technology, Inc is seeking a Principal HBM Design Architect to lead the design of high-speed DRAM interfaces for HBM cubes. You will be responsible for command logic and collaborate on full chip testbench development.

The ideal candidate will have extensive experience in DRAM operations, JEDEC specifications, and mixed-signal design, with a strong foundation in problem-solving and collaboration. Join us to innovate and drive next-generation memory solutions!