Principal HBM Design Architect

1000 Micron Technology, Inc.; Folsom (CA); On-site; USD 130,000 - 180,000; Full time

Benefits offered by this job

Medical, dental, and vision plans

Income protection

Paid family leave

Robust paid time-off

Paid holidays

Job summary

1000 Micron Technology, Inc. seeks a Member of Technical Staff HBM Design Architect to design high-speed interfaces between DRAM and base die in HBM cubes. You’ll engage in circuit simulations and collaborate on various design aspects while supporting new product development.

The ideal candidate should have extensive experience with DRAMs, particularly in command logic and analog circuit design. Micron offers robust benefits including medical, dental, vision plans, and substantial paid time-off.

Qualifications

• Extensive experience in DRAM operation and standards.
• Strong expertise in analog and mixed-signal design.
• Hands-on skills in command decoding and related designs.
• Demonstrated innovation in high-performance memory development.
• Excellent communication and teamwork abilities.

Responsibilities

• Design DRAM command and control logic.
• Conduct circuit simulations using industry-standard tools.
• Collaborate on full-chip testbench and data-path design.
• Analyze timing and power for designs.
• Support new HBM product development.

Skills

DRAM operation and JEDEC specifications

Analog circuit design

Mixed-signal circuit design

Command decoding and bank logic

Analytical and problem-solving skills

Education

MS degree in relevant field

BS degree in relevant field

Tools

FINESIM

HSPICE

Verilog

Job description

Overview

Micron Technology is a world leader in memory and storage solutions. As a Member of Technical Staff HBM Design Architect, you will design and develop the high-speed interface between DRAM and base die in HBM cubes, including command and control logic.

Responsibilities

• Design DRAM command and control logic and serializing/de‑serializing scheme at the interface.
• Conduct circuit simulations using FINESIM, HSPICE, and Verilog.
• Collaborate on floor planning, full-chip testbench, and data-path design.
• Analyze timing, area, and power for high‑speed DRAM or mixed‑signal designs.
• Support development of new HBM products, including layout and optimization of memory, logic, and analog circuits.

Qualifications

• Extensive experience with DRAM operation and JEDEC specifications across DDR, LPDDR, GDDR, and HBM product families.
• Strong expertise in analog and mixed‑signal circuit design.
• Hands‑on proficiency in DRAM command decoding, bank logic, and RAS/CAS chain design.
• Demonstrated innovation and problem‑solving in high‑performance memory development.
• Excellent analytical, communication, and collaboration skills.

Preferred Qualifications

• 10+ years of proven memory‑industry experience with an MS degree, or 15+ years with a BS degree (or equivalent).
• Track record of proactive, hardworking contribution in team environments.
• Ability to work effectively across design and verification teams to drive technical alignment and execution.

Benefits

Micron offers medical, dental, and vision plans, income protection, paid family leave, robust paid time‑off, and paid holidays. For more information, see the Benefits Guide at micron.com/careers/benefits.

Equal Opportunity

Micron is an affirmative action employer and is proud to be an equal‑opportunity workplace. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity, or any other factor protected by applicable federal, state, or local laws.