Lead Device Characterization Engineer – Advanced Memory

Micron Technology, Inc.

Boise (ID)

On-site

USD 120,000 - 180,000

Full time

14 days+
Application generator

Don’t send a generic resume — generate a resume and cover letter tailored to this exact role.

Get past ATS filters

Benefits offered by this job

Medical plan
Paid time off
Paid holidays

Job summary

Micron Technology, Inc. is seeking a senior engineer to lead electrical characterization of advanced DRAM and emerging memory devices on the TD Electrical Device Characterization team in Boise.

You will develop scalable test methods, automate data pipelines, and translate measurements into actionable product insights, with opportunities to mentor others and influence design choices. You will apply strong device physics knowledge and hands-on test expertise to improve reliability, performance,

Qualifications

  • MS or PhD or equivalent experience in Electrical Engineering or related field.
  • Strong foundation in semiconductor device physics and electrical characterization especially for DRAM and emerging memory architecture.
  • Experience with reliability characterization and time-zero baseline establishment.
  • Hands-on use of parametric test equipment and wafer-level or ATE systems.
  • Proficiency in C/C++, Python, and AI or LLM-based tools for automation and data analysis.

Responsibilities

  • Lead electrical characterization of advanced DRAM and emerging memory devices.
  • Develop and scale characterization methodologies, models, and standards.
  • Design and automate test flows, data pipelines, and analysis tools.
  • Investigate device behavior, reliability mechanisms, and root causes.
  • Collaborate across functions and present technical findings with clarity.

Skills

C/C++
Python
AI tools

Education

MS or PhD in Electrical Engineering or related field

Tools

parametric test equipment
wafer-level or ATE systems

Job description

Micron Technology, Inc. is seeking a senior engineer to lead electrical characterization of advanced DRAM and emerging memory devices on the TD Electrical Device Characterization team in Boise.

You will develop scalable test methods, automate data pipelines, and translate measurements into actionable product insights, with opportunities to mentor others and influence design choices. You will apply strong device physics knowledge and hands-on test expertise to improve reliability, performance,

Get your free, confidential resume review.

or drag and drop your file here.

Similar jobs

Similar jobs worth comparing

Device Characterization Engineer – Advanced Memory
Device Characterization Engineer – Advanced Memory

Micron • Boise (ID)

On-site
USD 140,000 - 200,000
Memory Device Characterization Engineer: Lead Advanced DRAM
Memory Device Characterization Engineer: Lead Advanced DRAM

Micron Technology, Inc • Boise (ID)

On-site
USD 110,000 - 160,000
Medical plans
Dental plans
Vision plans
+2
Lead Device Characterization Engineer, Advanced Memory
Lead Device Characterization Engineer, Advanced Memory

Micron Technology • Boise (ID)

On-site
USD 120,000 - 180,000
Senior Device Characterization Engineer — Memory Tech
Senior Device Characterization Engineer — Memory Tech

Micron Technology • Boise (ID)

On-site
USD 120,000 - 160,000
Senior Electrical Characterization Engineer - Memory Devices
Senior Electrical Characterization Engineer - Memory Devices

Micron Technology, Inc. • Boise (ID)

On-site
USD 120,000 - 190,000
Medical plan
Dental plan
Vision plan
+2
Senior Electrical Characterization Engineer (Memory Tech)
Senior Electrical Characterization Engineer (Memory Tech)

1000 Micron Technology, Inc. • Boise (ID)

On-site
USD 100,000 - 160,000
Senior Principal Engineer, Advanced DRAM & Memory
Senior Principal Engineer, Advanced DRAM & Memory

Energy Jobline ZR • Boise (ID)

On-site
USD 150,000 - 210,000
DRAM Device Engineer – Advanced Tech & Yield Leader
DRAM Device Engineer – Advanced Tech & Yield Leader

Micron Memory Malaysia Sdn Bhd • Boise (ID)

On-site
USD 120,000 - 180,000
Medical, dental, and vision plans
Paid time off and holidays
Competitive benefits package
DRAM Device Engineer – Advanced Memory & Cell Tech
DRAM Device Engineer – Advanced Memory & Cell Tech

1000 Micron Technology, Inc. • Boise (ID)

On-site
USD 125,000 - 180,000
Medical, dental, and vision plans
Income protection when unable to work
Paid time off and paid holidays
+1
DRAM Device Engineer, Advanced Cell Tech & Scaling
DRAM Device Engineer, Advanced Cell Tech & Scaling

Micron • Boise (ID)

On-site
USD 120,000 - 180,000
Medical, dental and vision plans
Paid time off and holidays
Benefits guide and programs