Memory Device Characterization Engineer: Lead Advanced DRAM

Micron Technology, Inc

Boise (ID)

On-site

USD 110,000 - 160,000

Full time

14 days+
Application generator

Turn this role into an interview — a resume and cover letter built around what this employer wants.

Get past ATS filters

Benefits offered by this job

Medical plans
Dental plans
Vision plans
Paid time off
401(k) plan

Job summary

Micron Technology, Inc. in Boise seeks a Device Characterization Engineer to lead electrical characterization of advanced memory devices, driving new methods from development through production.

You will design and automate test flows, build data pipelines, and analyze results to connect device behavior to reliability, performance, and product outcomes.

This role offers technical leadership, mentoring opportunities, and cross-functional collaboration with process, product, and equipment teams.

Qualifications

  • MS or PhD in Electrical Engineering or related field.
  • Strong foundation in semiconductor device physics and electrical characterization for DRAM and emerging memory.
  • Experience with reliability characterization and time-zero baseline establishment.
  • Hands-on use of parametric test equipment and wafer-level/ATE systems.
  • Proficiency in C/C++, Python, and AI/LLM-based tools for automation and data analysis.

Responsibilities

  • Lead electrical characterization of advanced DRAM and emerging memory devices.
  • Develop and scale characterization methodologies, models, and standards.
  • Design and automate test flows, data pipelines, and analysis tools.
  • Investigate device behavior, reliability mechanisms, and root causes.
  • Collaborate across functions and present technical findings with clarity.

Skills

C/C++
Python
AI tooling

Education

MS or PhD in Electrical Engineering

Tools

Parametric test equipment
ATE systems

Job description

Micron Technology, Inc. in Boise seeks a Device Characterization Engineer to lead electrical characterization of advanced memory devices, driving new methods from development through production.

You will design and automate test flows, build data pipelines, and analyze results to connect device behavior to reliability, performance, and product outcomes.

This role offers technical leadership, mentoring opportunities, and cross-functional collaboration with process, product, and equipment teams.

Get your free, confidential resume review.
or drag and drop your file here.
Similar jobs

Similar jobs worth comparing

Lead Memory Device Characterization Engineer
Lead Memory Device Characterization Engineer

1000 Micron Technology, Inc. • Boise (ID)

On-site
USD 120,000 - 160,000
Medical, dental and vision plans
Paid time off
Paid holidays
DRAM Device Engineer – Advanced Tech & Yield Leader
DRAM Device Engineer – Advanced Tech & Yield Leader

Micron Memory Malaysia Sdn Bhd • Boise (ID)

On-site
USD 120,000 - 180,000
Medical, dental, and vision plans
Paid time off and holidays
Competitive benefits package
DRAM Device Engineer – Advanced Memory & Cell Tech
DRAM Device Engineer – Advanced Memory & Cell Tech

1000 Micron Technology, Inc. • Boise (ID)

On-site
USD 125,000 - 180,000
Medical, dental, and vision plans
Income protection when unable to work
Paid time off and paid holidays
+1
Lead Memory Device Characterization Engineer
Lead Memory Device Characterization Engineer

Micron Technology • Boise (ID)

On-site
USD 140,000 - 190,000
Medical/Dental/Vision plans
Paid time off
Paid holidays
Senior DRAM Device Engineer: Advanced Cell Tech & Scaling
Senior DRAM Device Engineer: Advanced Cell Tech & Scaling

Micron Technology Inc • Boise (ID)

On-site
USD 110,000 - 170,000
Medical, dental and vision plans
Paid time off
Paid holidays
Lead DRAM Device Engineer – Drive Yield & Memory Innovation
Lead DRAM Device Engineer – Drive Yield & Memory Innovation

Micron Technology, Inc • Boise (ID)

On-site
USD 130,000 - 180,000
Medical, dental & vision plans
Paid time off
Paid holidays
DRAM Device & Cell Tech Engineer — Innovate Next-Gen Memory
DRAM Device & Cell Tech Engineer — Innovate Next-Gen Memory

Micron Technology, Inc • Boise (ID)

On-site
USD 120,000 - 170,000
DRAM Device Engineering Lead — Yield & Tech Strategy
DRAM Device Engineering Lead — Yield & Tech Strategy

Micron Technology • Boise (ID)

On-site
USD 140,000 - 190,000
Senior DRAM Design Engineer - Innovative Memory Architect
Senior DRAM Design Engineer - Innovative Memory Architect

Micron Technology, Inc • Boise (ID)

On-site
USD 120,000 - 190,000
Relocation support may be available
Medical, dental and vision plans
Paid time off and holidays
Senior DRAM Device & Cell Technology Engineer
Senior DRAM Device & Cell Technology Engineer

Micron Technology • Boise (ID)

On-site
USD 90,000 - 120,000
Medical, dental, and vision plans
Robust paid time-off
Paid holidays